Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Abstract

Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray diffraction and secondary ion mass spectrometry measurements. Three InGaAs/InP metal-semiconductor-metal devices were fabricated at room temperature. The experimental forward and reverse bias current–voltage characteristics of the devices such as ideality factor, barrier height, and saturation current were evaluated considering the structural properties of the grown structures. The carrier recombination lifetime and diffusion length in the devices were also calculated using carrier density and mobility data obtained with Hall effect measurement at room temperature. It was determined that all room temperature fabricated devices improved the Schottky barrier height. Especially, the device fabricated on the lower mismatched structure exhibited barrier height enhancement from 0.2 eV, which is the conventional barrier height to 0.642 eV. In addition, the obtained results show that the room temperature fabricated devices on InGaAs/InP structures can be convenient for infrared photodetector applications.

Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals

“…However, the limitations of photoelectric sensors based on traditional covalently bonded bulk materials (e.g., Si, In x Ga 1−x As, and Hg x Cd 1−x Te) have gradually emerged including large volume, high brittleness, rigorous operating conditions, as well as complicated preparation and processing. [1][2][3] Therefore, they can hardly adapt to the development trend of next-generation integrated optoelectronics. In this consideration, it is an impending demand to explore new light-sensing material systems as potential alternatives.…”

Surface‐interface analysis of InxGa1‐xAs/InP heterostructure in positive and negative mismatch system

“…As ternary III‐V compounds, In x Ga 1 − x As (0 < x < 1) films with relatively high carrier density, wide direct band gap from 0.35 to 1.42 eV, high reliability and radiation resistance have been widely applied into optical and electronic devices, such as short‐wave infrared photodetectors, light‐emitting diodes, lasers, solar cells, and high‐mobility transistors . With the recent technical development, various epitaxial growth technologies such as physical vapor deposition (PVD), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metal‐organic chemical vapor deposition (MOCVD) have been explored to prepare high‐performance thin‐film semiconductors .…”

“…Both InP and GaAs are common substrates used in heterostructures . The preparation technology of InP crystal materials is less mature compared with the GaAs substrate; it is difficult to obtain large‐size substrates such as Si and GaAs.…”