Surface‐interface analysis of In_xGa_1‐xAs/InP heterostructure in positive and negative mismatch system

Abstract

The change of In content in the InxGa1-xAs/InP system leads to the variation of the lattice constant and thereby to the negative mismatch between the base InP and the positive mismatch. Here, we studied the surface morphology and dislocation relationship of In x Ga 1-x As/InP (100) in the positive and negative mismatch system by different characterization techniques. Under the same mismatch, the surface morphology and mass effect of negative mismatch were greater than those of positive mismatch.The reason was that in the negative mismatch system, during the film growth, the disorder degree at the interface increases, leading to an increase in dislocation density, meanwhile, the dislocation in the substrate more easily moved into the film, thus increasing the film and the dislocation density in it. Moreover, the mechanism of the buffer layer was also clarified. The addition of the buffer layer first limited the dislocation movement in the substrate, and secondly reduced the mismatch between the epitaxial layer and the substrate, thereby reducing mismatch dislocation.

Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application

“…The band alignment (Figure 5) reveals that the Mg 2 Si/4H‐SiC heterojunction could be a promising candidate for the construction of photodetector. For the photodetector, 29–31 first, a low leakage current is one of the requirements. The Mg 2 Si/4H‐SiC heterostructure could offer a proper barrier height (1.00 eV) for electrons and 1.47 eV for holes, which can decrease effectively the leakage current.…”

Nanostructured Light-Emitters

“…AlGaN nanowire UV LEDs on the graphene-coated glass substrate have been demonstrated recently [98]. The UV light is emitted through the substrate.…”

“…Even though there is a significant difference in crystal structure, the epitaxy of hexagonal III-Nitrides on (1 0 0) and (−2 0 1) β-Ga 2 O 3 is still achieved [98][99][100][101][102][103]. The epitaxial relationship between monoclinic β-Ga 2 O 3 and the wurtzite III-Nitrides is investigated at the atomic level [45].…”

“…GaN deposited under the nitridation pressure less than 10 2 Pa was grey and of low adhesion, indicating a non-effective nitridation process. GaN grown under pressure more than 10 3 Pa was characterized with a mirror-like surface, suggesting a sufficient nitridation process [98]. The smooth interface indicated that the precondition would not cause a reaction in depth, but only a rearrangement on the surface [45].…”

Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

“…The application of 2D materials in LEDs mainly involves the synthesis of various thin films and the preparation of devices with heterogeneous LED structures [95][96][97][98]. Similar to zero and one-dimensional nanomaterials, it is also very important to quantify the influence of the 2D surface/interface on LED devices and to adopt effective methods to reduce the useless surface/interface recombination mechanism [99].…”