Depth profiling of organic materials using improved ion beam conditions

Cramer, H.‐G.; Grehl, Thomas; Kollmer, Felix; Moellers, Rudolf; Niehuis, E.; Rading, Derk

doi:10.1016/j.apsusc.2008.05.028

Cited by 52 publications

(47 citation statements)

References 7 publications

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“…This effect is routinely used in SIMS depth profiling by applying oxygen sputtering to increase positive ion yields and cesium sputtering to increase negative ion yields [17,18]. In those cases, the secondary ion yields strongly increase with the concentration of the reactive species.…”

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confidence: 99%

Organic secondary ion mass spectrometry: Signal enhancement by water vapor injection

Mouhib

Delcorte

Poleunis

et al. 2010

J. Am. Soc. Mass Spectrom.

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The enhancement of the static secondary ion mass spectrometry (SIMS) signals resulting from the injection, closely to the sample surface, of H 2 O vapor at relatively high-pressure, was investigated for a set of organic materials. While the ion signals are generally improved with increasing H 2 O pressure upon 12 keV Ga ϩ bombardment, a specific enhancement of the protonated ion intensity is clearly demonstrated in each case. For instance, the presence of H 2 O vapor induces an enhancement by one order of magnitude of the [M ϩ H] ϩ static SIMS intensity for the antioxidant Irgafos 168 and a ϳ1.5-fold increase for polymers such as poly(vinyl pyrrolidone).

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confidence: 99%

Organic secondary ion mass spectrometry: Signal enhancement by water vapor injection

Mouhib

Delcorte

Poleunis

et al. 2010

J. Am. Soc. Mass Spectrom.

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“…It is reported that C 60 sputtering realizes extremely low damage for organic materials [2] and, using x-ray photoelectron spectroscopy (XPS), it shows better effectiveness with higher incident angle [3]. Cramer et al [4] explicitly reported C 60 sputtering is not suitable for bulk or spin-coated polycarbonate (PC) and polystyrene (PS) materials. They recommended cesium sputtering for PC and oxygen sputtering for PS.…”

Section: Introductionmentioning

confidence: 99%

“…From much published information, and from our experience, we endeavor to perform depth profiling of PC and PS using C 60 , and to make a comparison against a * Corresponding author: shinichi_iida@ulvac.com previous report [4]. We have studied the incident angle dependence of some polymeric materials among the parameters that should be optimized which include: (i) ion beam energy/current, (ii) incident angle, (iii) temperature, and (iv) beam property, but little has been studied regarding the incident angle [9,10].…”

Section: Introductionmentioning

confidence: 99%

Incident Angle Dependence in Polymer TOF-SIMS Depth Profiling with C60 Ion Beams

Iida

Miyayama

Sanada

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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Cluster ions such as C + 60 are well used as the sputtering ions for polymer depth profiling. The molecules of analyte surfaces are occasionally damaged by the ion bombardment during sputtering, leading to a loss of the molecular information. In order to obtain a proper polymer depth profile, sputtering conditions shall be optimized, however, they have not been investigated sufficiently. In this study, incident angle dependence was investigated at the angle from 48• to 76• with respect to the surface normal. Samples used were the bulk polycarbonate (PC), bulk polystyrene (PS), and Irganox1010/Irganox3114 organic multi layer film. Irganox3114 layers were deposited at the several depths in the Irganox1010 film as markers to evaluate the interface resolution. Characteristic TOF-SIMS spectra from PC and PS were retained even after sputtering hundreds of nanometers at 76• , although the loss of the molecular information due to carbon deposition and/or damage accumulation was observed at 48• . From the depth profile of Irganox1010/Irganox3114, significant improvement of interface resolution was obtained at 76• over that at 48• . This work indicates that glancing angle sputtering clearly becomes one of the approaches to optimize C60 polymer depth profiling.

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“…[7,8] Several studies have examined the ion yields for a considerable variety of cluster species and target materials: [4][5][6][9][10][11] Very generally, with increasing cluster size, the yields appear to increase (sometimes even quite dramatically) whereas the number of emitted fragment molecules is reduced, to the extent that depth profiling of (thick) organic and biological layers and 3D imaging become feasible. [12][13][14][15][16] Extending the range of useful cluster ion species, large gas cluster ions such as Ar n + could constitute a viable option. The application of Ar n + cluster ions (with up to n = 10 000 or more) for ion surface modifications was pioneered by the Kyoto group of Yamada and Matsuo.…”

Section: Introductionmentioning

confidence: 99%

Sputtered ion emission under size‐selected Ar_n⁺ cluster ion bombardment

Gnaser

Ichiki

Matsuo

2012

Surface & Interface Analysis

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The emission of positive secondary ions from four amino acids (arginine, glycine, phenylalanine, and tyrosine) and from NaCl under irradiation with large Arn+ cluster ions was investigated by time‐of‐flight secondary ion mass spectrometry. Size‐selected 5.5‐keV Arn+ cluster ions with 300 ≤ n ≤ 2000 were used, and the flux of sputtered positive ions was monitored as function of cluster size n. For all cluster sizes, the protonated or the cationized molecular ions are observed in the mass spectra. In addition, the results show that with increasing cluster size, the number of fragment molecules strongly decreases in relation to the intact molecules, to the extent that the ratio of fragment to intact ions is 10% or less for the largest cluster ions. Generally, the ion yields Y+ were found to decrease for decreasing impact energy per cluster atom, E/n, and this attenuation was recorded down to values as low as E/n ~ 3 eV/atom. The general trend of Y+ versus E/n is similar for all targets and appears to follow a power‐law dependence, Y+ ∝ (E/n)x, with x ~ 4. This pronounced yield change could be ascribed to a reduction of the ionization probability which is envisaged to depend on the presence of free protons. Their number is expected to decrease concurrently with the decreasing amount of fragmentation for large cluster ions (i.e. for low energies/atom). Copyright © 2012 John Wiley & Sons, Ltd.

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Depth profiling of organic materials using improved ion beam conditions

Cited by 52 publications

References 7 publications

Organic secondary ion mass spectrometry: Signal enhancement by water vapor injection

Organic secondary ion mass spectrometry: Signal enhancement by water vapor injection

Incident Angle Dependence in Polymer TOF-SIMS Depth Profiling with C60 Ion Beams

Sputtered ion emission under size‐selected Ar_n⁺ cluster ion bombardment

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Depth profiling of organic materials using improved ion beam conditions

Cited by 52 publications

References 7 publications

Organic secondary ion mass spectrometry: Signal enhancement by water vapor injection

Organic secondary ion mass spectrometry: Signal enhancement by water vapor injection

Incident Angle Dependence in Polymer TOF-SIMS Depth Profiling with C60 Ion Beams

Sputtered ion emission under size‐selected Arn+ cluster ion bombardment

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Sputtered ion emission under size‐selected Ar_n⁺ cluster ion bombardment