2017
DOI: 10.1039/c6ta09493g
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Depth-resolved band alignments of perovskite solar cells with significant interfacial effects

Abstract: The band alignment in heterojunction solar cells, including perovskite solar cells (PSCs), is critically related to power conversion efficiency (PCE) improvement as it has a significant effect on the control of photocarrier transport.

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Cited by 46 publications
(26 citation statements)
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“…From the absorbance spectrum, it is possible to estimate the optical band gap of the two types of PeNPs from a Tauc plot, (Figure S3 in the Supporting Information). The calculated band gaps match closely: 2.40 and 2.37 eV for the RT and HI methods, respectively (Figure S3 in the Supporting Information) . These results are in good agreement with previous reports that have been used as a reference for this study .…”
Section: Resultssupporting
confidence: 91%
“…From the absorbance spectrum, it is possible to estimate the optical band gap of the two types of PeNPs from a Tauc plot, (Figure S3 in the Supporting Information). The calculated band gaps match closely: 2.40 and 2.37 eV for the RT and HI methods, respectively (Figure S3 in the Supporting Information) . These results are in good agreement with previous reports that have been used as a reference for this study .…”
Section: Resultssupporting
confidence: 91%
“…The computed absorption coefficient curves of A 2 AgRhCl 6 show an onset around 1.1 and 1.3 eV; these are consistent with the SCF bandgaps predicted with SCAN-rVV10 ( Table S2). The Tauc plot, Figure 5B, provides similar insight, since it is often used to extract the bandgaps from experimental absorption spectra (Eom et al, 2017;Tang et al, 2017;Habibi and Eslamian, 2018;Ji et al, 2018). The peak feature in the visible region with an appreciable absorption coefficient is a strong indication that A 2 AgRhCl 6 are potential candidates for possible optoelectronic applications.…”
Section: Optical Propertiesmentioning
confidence: 91%
“…Semiconductor heterostructures, having tailorable band structures, are important components for high-performance electronics and optoelectronics. [1][2][3][4][5] In such heterostructures, engineering the offsets of the conduction/valence bands at the heterointerfaces between the incorporated semiconductors gives rise to widely tunable electronic behavior. [1] Typically, when semiconductors of distinctive bandgaps are stacked together, three types of heterostructures can be attained based on the designed band alignments, i.e., type-I (symmetric), type-II (staggered), and type-III (broken) alignments.…”
Section: Doi: 101002/adma202005166mentioning
confidence: 99%