Depth-resolved residual stress evaluation from X-ray diffraction measurement data using the approximate inverse method

Schuster, Thomas; Plöger, J.; Louis, Alfred K.

doi:10.1515/ijmr-2003-0166

Cited by 1 publication

(1 citation statement)

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“…Therefore, some calculation methods are continuing to be improved. For example, the curvature method based on Stoney’s formula is suitable for measuring almost all types of thin films [ 39 ], while the X-ray diffraction technique can be used on typically crystalline thin films [ 40 ], and the Raman spectroscopy is used for amorphous thin films [ 41 ].…”

Section: Introductionmentioning

confidence: 99%

Effects of Film Thickness on the Residual Stress of Vanadium Dioxide Thin Films Grown by Magnetron Sputtering

Wang

Yan

et al. 2023

Materials

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Vanadium dioxide (VO2) thin films of different thicknesses were prepared by regulating the deposition time (2, 2.5, 3, and 3.5 h). The impact of deposition time on the microstructure, surface morphology, and cross-section morphology was investigated. The results showed that the grain size increased with the film thickness. Meanwhile, the influence of film thickness on the residual stress was evaluated by X-ray diffraction. The phenomenon of “compressive-to-tensile stress transition” was illustrated as the thickness increased. The change of dominant mechanism for residual stress was used for explaining this situation. First, the composition of residual stress indicates that growth stress play a key role. Then, the effect of “atomic shot peening” can be used to explain the compressive stress. Lastly, the increased grain size, lower grain boundary density, and “tight effect” in the progress of film growth cause tensile stress.

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Section: Introductionmentioning

confidence: 99%