“…This hypothesis is equivalent to that used to obtain (9) from (8). It follows that [16] (13) where nC' ox = C' ox +C' b Equation (13) represents the UCCM in differential form. Substituting (13) …”
Section: Figure 1: Small-signal Model For the Three-terminal Mosfetmentioning
It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIMtype models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.
“…This hypothesis is equivalent to that used to obtain (9) from (8). It follows that [16] (13) where nC' ox = C' ox +C' b Equation (13) represents the UCCM in differential form. Substituting (13) …”
Section: Figure 1: Small-signal Model For the Three-terminal Mosfetmentioning
It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIMtype models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.
“…As in [14], we assume that fluctuations in the number of impurities is solely responsible for fluctuations in the number of carriers. To derive the fluctuation of the inversion charge density, we have used the capacitive MOS model of Recalling [21], [26] that and under any bias condition, (8b) can be rewritten as…”
Section: Number Fluctuation Mismatch Modelmentioning
“…This hypothesis is equivalent to that used to obtain (9) from (8). It follows that [16] dQ( 1 -= dVc (13) where nC'ox= C'ox+C'b Equation (13) represents the UCCM in differential form. Substituting (13) into (4) yields …”
It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIMtype models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.
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