Derivative superposition method for DG MOSFET application to RF mixer

Radio Frequency IC Design with Nanoscale DG-MOSFETs

“…al. [43] analyzes the RF Mixer based on the derivative superposition method. An earlier work [44] considers the evaluation of power consumption and area overhead of the DG-MOSFET for RF-mixer applications.…”

Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

“…However, f MAX is not affected by R g,effect as the variation in R g with the gate height is quite negligible with respect to the variation in f T , intrinsic capacitances, and the output conductance with gate height. It is well known that the linearity is a key performance matrix in RF circuit analysis, as nonlinearity results in the harmonic generation, gain compression, and intermodulation distortion [31]. The FOM for device linearity performance is determined by third order nonlinearity term IIP3 which is given by the expression [32]: Where R s = 50 Ω for most RF applications and g m1 , g m2 are the first and second order coefficients of g m , respectively.…”