Description of facet growth during VGF growth

Frank, C.; Hein, K. R. G.; Buhrig, E.

doi:10.1002/crat.2170290133

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Discussion Of Facetting1

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Cited by 6 publications

(3 citation statements)

References 5 publications

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“…Due to the strong facetting in the cone (Fig. 3and[27,28]), the crystal cross-section is nearly rectangular in the cone with the corners close to the [1 0 0]-and [0 1 0]-directions. These geometrical aspects might lead to localized stresses which in turn could result in the occurence of this dislocation type.3.3.…”

mentioning

confidence: 99%

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann

Stenzenberger

Jurisch

et al. 2005

Journal of Crystal Growth

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mentioning

confidence: 99%

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann

Stenzenberger

Jurisch

et al. 2005

Journal of Crystal Growth

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“…The (DS m /R)-ratio for the nitrides is approximately the same as that for GaAs, which shows an interesting facetting behaviour [24,25]. Therefore, also in the (hypothetical) melt growth of the nitrides facetting should be expected.…”

Section: Discussion Of Facettingmentioning

confidence: 90%

Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN

Birkmann

Hussy

Sun

et al. 2006

Journal of Crystal Growth

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“…Nevertheless this seems not to be true in all cases as discussed in [13]. Another possible explanation is connected with the pronounced facetting of Si-doped GaAs especially in the crystal cone [11,32,33]. Due to facetting, the crystal has no rotational symmetry when the cone is growing.…”

Section: Original Papermentioning

confidence: 93%

Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities

Müller¹,

Schwesig²,

Birkmann³

et al. 2005

Physica Status Solidi (a)

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Dedicated to Professor Horst P. Strunk on the occasion of his 65th birthday PACS 61.72.Ff, 61.72.Lk, 81.05.Ea, 81.10.Fq Bulk GaAs and InP crystals with diameter of 4″ or more can now be grown with very low dislocation densities (EPD considerably below 1000 cm -2 ) using the Vertical Gradient Freeze (VGF) growth technique and rigorous process optimization by the aid of numerical simulation. It turns out that the usually dominating 60°-dislocations are no longer the dominating type if the dislocation density is in the range of EPD = 100 cm -2 or below. The goal of growing large dislocation-free GaAs and InP crystals like Si can only be reached if the types of these "residual dislocations" are identified and their origin is fully understood. This paper therefore reviews the present knowledge about these residual dislocations in GaAs and InP for various dopants.

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Description of facet growth during VGF growth

Cited by 6 publications

References 5 publications

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN

Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities

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