Design & Optimization of Gate-All-Around Tunnel FET for Low Power Applications

Abstract

This paper investigates the performance of tri material gate tunnel field effect transistor (TMGTFET) device designed in gate all around (GAA) configuration. The device performance is analyzed by varying various device related parameters like: drain doping, oxide thickness and radius of silicon core. Simulations are performed using technology computer-aided design (TCAD) tool at 60 nm gate length. Simulation results show that the performance of TMGTFET device can be optimized by proper selection of device parameters so as to achieve improvements in the ON current, OFF current, sub-threshold swing and ambipolar current. The silicon based TMGTFET device demonstrates good performance which makes it a suitable candidate for low power applications with ON current of 0.386 µA/µm, average subthreshold swing of 32.06 mV/decade, maximum current gain cut off frequency of 41.4 GHz and extremely low OFF current value of the order of 10-20A/µm. We have performed the device optimization to boost the ON current and improve the sub-threshold slope in order to make sure that this device configuration becomes suitable for both low power and high performance applications. The proposed hetero dielectric tri material gate tunnel FET device (HD-TFET) designed in gate all around configuration achieves 19.7 times improvement in ON current as compared to TMGTFET device and excellent average sub-threshold swing of 21.2 mV/decade. The maximum unity current gain frequency is also improved by 3 times indicating its potential for deployment in high frequency applications.

Nanowire gate all around-TFET-based biosensor by considering ambipolar transport

“…The charge of the biomolecule can show the notable impact on sensitivity for low dielectric constant valued biomolecules. However, when the dielectric constant of the biomolecule increases, it will dominate and reduce the charge of the biomolecule on sensitivity [23][24][25][26][27].…”

“…The nanowire GAA-TFET biosensor shows excellent improvement in the device sensitivity in terms of high drain current variation. Apart from this, the nanowire GAA-TFET biosensor is capable of exhibiting high, prominent threshold voltage characteristics [22][23][24][25][26][27][28][29][30][31][32]. The device's surrounded gate structure facilitates the gate with high controllability over the intrinsic channel and makes it operate at low voltages.…”

Performance Analysis of Vertically Stacked Nanosheet Tunnel Field Effect Transistor with Ideal Subthreshold Swing

“…In the BTBT mechanism, the width of the tunneling barrier is modulated on the variation of gate voltage at constant drain voltage. The asymmetric lower drain doping is used to curb ambipolar behavior [22][23]. Work function engineering has been done to achieve desirable results.…”

“…Physical models used in Genius code de ne the behavior of semiconductor devices [22]. These models specify physical parameters like mobility, recombination rate, etc.…”

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET

“…Scaling of complementary metal-oxide-semiconductor (CMOS) technology has been a primary focus of the semiconductor industry over the decades to minimize device per-function costs, increase speed, and decrease power consumption [1]- [3]. Numerous challenges have arisen as a result of the scaling down of the device size in MOSFETs, including short channel effects (SCEs), raising the leakage current, hot carrier effects (HCEs), drain induced barrier lowering (DIBL), and reliability issues [4]. Moreover, in case of MOSFETs, the 60 mV/decade limit on the inverse The associate editor coordinating the review of this manuscript and approving it for publication was Anisul Haque.…”