Design and Analysis for a 850 nm Si Photodiode Using the Body Bias Technique for Low-voltage Operation

Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes

“…Several main and important problems should be considered in the study of the silicon-based UV photodiode in the standard CMOS process: (1) the noise and leakage current on the silicon surface [8,9], (2) the spectral response range of the UV photodetector and the penetration depth of UV light into the silicon material [10,11], (3) the fabrication of the ultra-shallow pn junction in the CMOS process [12][13][14], and (4) a decrease in the breakdown voltage or operation voltage of the photodiode for silicon-on-a-chip (SoC) integration [15][16][17]. To optimize the noise performance of the UV photodiode, the processes of doping and isolation need to be improved.…”

Low-propagation-loss Ta2O5 optical waveguides on silica substrate

“…[15][16][17][18] On the other hand, the c-Si substrate itself can be used as an active device such as a photodetector in the 0.8 µm wavelength range. [19][20][21][22] A c-Si avalanche photodiode has been fabricated by a 0.18 µm CMOS standard process 23,24) and succeeded in obtaining a bandwidth of more than 7 GHz. 25) However, in this case, c-Si is unsuitable as a material of a waveguide in the 0.8 µm wavelength range 26,27) because of the absorption of Si.…”

A 0.5-V P-Well/Deep N-Well Photodetector in 65-nm CMOS for Monolithic 850-nm Optical Receivers

“…To improve the responsivity and the bandwidth of CMOS PDs, two major approaches have been investigated -spatially modulated PD (SMPD) [3], [6] and avalanche PD (APD) [4], [8]- [11], [13]. SMPD employs differential, symmetrical layout with half of the PD blocked from the light source to cancel out the slow diffusion current in the substrate absorption region.…”

“…The lateral alternative has been studied in [11] and [13]. The measured dc responsivity, ac response, modeling formula and received data eye diagram will be presented.…”