Design and analysis of a robust system for wirelessly powering implantable devices

Varghese, Benny J.; Bobba, Phaneendra Babu

doi:10.1109/icpeices.2016.7853422

Cited by 18 publications

(6 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results show that the system achieves good agreements between the analytical design procedure, the circuit model, the EM simulations, and the measurements. The WPT efficiency is calculated using (7).…”

Section: Resultsmentioning

confidence: 99%

“…The unmanned aerial vehicles are the good application of these techniques. Depending on lumped elements in the near-field methods and these elements are lossy and bulky in low-frequency applications for that some designs are forwarded to use printed spirals with surface-mount device (SMD) capacitors for being suitable in broad-to-broad applications, electric vehicles, biomedical implants applications [6][7][8], and for being more compact in WPT systems applications [8,9]. The authors in [10] used the WPT technology for reducing the pollution coming from the electric vehicles on the streets.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Compact coupled resonators for small size dual‐frequency wireless power transfer (DF‐WPT) systems

Atallah

Hussein

Abdel‐Rahman

2020

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

This work introduces a novel design for high efficiency and compact size dual‐frequency wireless power transfer (DF‐WPT) systems. The proposed design is composed of two identical transmitting (Tx) and receiving (Rx) substrates. Each substrate has a microstrip feed line, a C‐shaped coupled resonator on the top layer and a spiral coupled defected ground structure on the bottom layer. The system is analysed using J‐inverters for the dual‐frequencies (DFs) operation. The measured results show that the proposed DF‐WPT system with a compact size of 20 × 20 mm2 is able to provide a stable WPT characteristic with total efficiencies of 91.2 and 79.4% at 0.28 and 0.49 GHz, respectively with a transmission distance of 6 mm. The proposed system achieved good agreements between the analytical design procedure, the circuit model, the electromagnetic simulations, and the measurements.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Compact coupled resonators for small size dual‐frequency wireless power transfer (DF‐WPT) systems

Atallah

Hussein

Abdel‐Rahman

2020

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

show abstract

“…They are suitable for use in aeronautical constructions and other parts that are susceptible to corrosion because of this characteristic. Therefore, the alloys are ideal for use in systems like hydraulic hoses [8][9].…”

Section: Introductionmentioning

confidence: 99%

Finite Element Analysis on Experimental Stretch Forming Process of AA2014 Alloy at 423 to 623K Temperatures

Lade,

Baloji,

Sharath

et al. 2023

E3S Web Conf.

View full text Add to dashboard Cite

Sheet metal forming processes are extremely important in the production of many different items. However, the issue of plastic instability, which frequently results in damaged goods, still exists in this industry. To solve this problem during production, it is crucial to take into account a number of factors, limiting diagram of forming. Present case, the Aluminum Alloy (AA2014) has been used to examine its formability at various temperatures (423,523 and 623K) and at strain rates (0.1 mm/s). Stretch forming was used to acquire the study’s findings, and the Nakajima test was used. The findings were evaluated using fractography investigations carried out with SEM. The outcomes demonstrated that as the temperature rose, the material’s limiting stresses became more favorable. Utilizing LS-dyna software, the simulations were carried out. The experimental findings are within the acceptability limit according to this study.

show abstract

“…The inverters have wide range of applications in automobile industry and are creating a change of positivity in the electric vehicles. Electric vehicles require more output power so as to deliver and the inverters which are proposed in this literature are quite same as the requirement of it [7] [8]. The charging of the electric vehicles is done mainly through the WPT (Wireless Power Transfer) which is more comfortable than the conventional charging stations [6] and for that WPT these inverters are used for their efficiency.…”

Section: Introductionmentioning

confidence: 99%

Comparison of GAN, SIC, SI Technology for High Frequency and High Efficiency Inverters

Pullabhatla¹,

Bobba²,

Satyavani³

2020

E3S Web Conf.

Self Cite

View full text Add to dashboard Cite

Power semiconductor devices plays a major role in efficient power conversion. As we have Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN) based power devices, GaN technologies are ideal for working in high frequency power electronic systems (in MHz). Because the GaN has superior electron mobility and bandgap than the SiC and Si it has superior characteristics like low conduction losses, high switching rate so that there is better power efficiency than SiC, Si based inverter. Here we are using the Gan based High-Electron-Mobility Transistor (HEMT) and SiC and Si based mosfet in the inverter. The proposed inverter of different topologies is designed to transfer the power at >1MHz range. Comparison of the three different switches is done by the output power and the efficiency of the inverter. This paper presents the SPICE simulation results of the class d and class e inverter of output power 1KW.

show abstract

Design and analysis of a robust system for wirelessly powering implantable devices

Cited by 18 publications

References 3 publications

Compact coupled resonators for small size dual‐frequency wireless power transfer (DF‐WPT) systems

Compact coupled resonators for small size dual‐frequency wireless power transfer (DF‐WPT) systems

Finite Element Analysis on Experimental Stretch Forming Process of AA2014 Alloy at 423 to 623K Temperatures

Comparison of GAN, SIC, SI Technology for High Frequency and High Efficiency Inverters

Contact Info

Product

Resources

About