Comparison of GAN, SIC, SI Technology for High Frequency and High Efficiency Inverters

Abstract

Power semiconductor devices plays a major role in efficient power conversion. As we have Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN) based power devices, GaN technologies are ideal for working in high frequency power electronic systems (in MHz). Because the GaN has superior electron mobility and bandgap than the SiC and Si it has superior characteristics like low conduction losses, high switching rate so that there is better power efficiency than SiC, Si based inverter. Here we are using the Gan based High-Electron-Mobility Transistor (HEMT) and SiC and Si based mosfet in the inverter. The proposed inverter of different topologies is designed to transfer the power at >1MHz range. Comparison of the three different switches is done by the output power and the efficiency of the inverter. This paper presents the SPICE simulation results of the class d and class e inverter of output power 1KW.

Excimer laser doping for the fabrication of 4H-SiC power devices

“…4H-SiC (Silicon Carbide) has a band gap energy of 3.26 eV and can be used in power devices as a wide-gap semiconductor. It exhibits excellent material properties, with high breakdown field approximately 10 times that of silicon (Si) [1][2][3][4][5]. Currently, Schottky barrier diodes (SBDs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) have been commercialized and are distributed in the market [6][7][8].…”

International Journal of Electronics and Telecommunications

“…GaN E-HEMT transistors can be compared with silicon MOSFET power devices. However, some differences in structure, operation, and application have to be noted [10].…”