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In this study, nitrogen is doped into 4H-SiC by irradiating 4H-SiC with a SiNx thin film and a KrF excimer laser. The doping depth profile, crystal structure, electrical properties, and surface roughness results are used to evaluate the excimer-laser doping mechanism. High concentration doping was possible at a fluence of 2.5 J/cm² and 10 shots while maintaining the 4H-SiC crystal structure by solid-phase diffusion. However, damage to the 4H-SiC structure was observed by liquid-phase diffusion at a fluence of 2.8 J/cm² or higher. At a fluence of 2.5 J/cm² and 100 shots, nitrogen could be deeply diffused by solid-phase diffusion, but an amorphous layer was formed on the surface and there was an increase in contact resistance.

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