Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

Abstract

This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La2O3) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n+ donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length LSD = 35 nm, with La2O3 as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (ION/IOFF ratio) of 1.06 × 109, and a low leakage current, or OFF current (IOFF), of 3.84 × 10−14 A. The measured values of the mid-channel conduction band energy (Ec) and charge carrier density (ρ) at VG = VD = 0.5 V are −0.309 eV and 6.24 × 1023 C/cm3, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

“…Table 3 shows the algorithmic comparison results of Si Trigate NW. Out of which, this present designed method (Section 3) has obtained leakage current (I OFF = 0.973 ×10 −9 ) times less than the author's previously analyzed works of GAA nanowires [44]. The subthreshold slope increases with an increase in gate voltage and decreases when gate length increases.…”

“…The left and right fermi levels (E FL -E RL ) and the Transmission (T) have been used to generate the normalized current density spectra (i z /i z , avg). As demonstrated in the author's earlier research [44][45][46], the current density distribution of Si-NW reaches uniformity up to an energy value of 2.5 eV and then increases when the Wagner number (W ag > 5) is exceeded.…”

Deep learning neural network for approaching Schrödinger problems with arbitrary two-dimensional confinement

“…Beyond the theoretical interest, solving a 2D confinement problem can be useful in practice, mainly for quantum wires [37,38], highly oblate or flat 3D quantum dots [39,40], and 2D quantum dots [41,42]. In the first case, quantum confinement occurs along the transverse directions of the wire, which is where the 2D character of the SE comes from [43].…”