Design and Analysis of Hybrid Integrated High-Speed Mushroom Vertical PIN Photodetector

Abstract

We present a new high-speed drift-enhanced InGaAs/InP mushroom vertical PIN photodetector which is integrated on a GaAs/AlGaAs F-P filter cavity using an undercut mushroom mesa structure to significantly reduce both the detectorRCconstant and the parasitic capacitance. A 3dB bandwidth of 110 GHz and a quantum efficiency of 68% are simultaneously obtained at 1.55 μm wavelength.