Design and analysis of vertical-cavity semiconductor optical amplifiers

Abstract

Abstract-The authors present detailed, yet largely analytical, models for gain, optical bandwidth, and saturation power of vertical-cavity semiconductor optical amplifiers (VCSOAs) in reflection and transmission mode. Simple formulas for the gain-bandwidth product are derived. The saturation model considers a sublinear material gain, gain enhancement by the standing-wave effect, and all relevant carrier recombination mechanisms. Excellent agreement with measurements on novel 1.3-m VCSOAs is obtained. The models are used to analyze device performance and to investigate optimization options. Parameter plots are given which allow for an easy exploration of the VCSOA design space, matching desired performance data with the required mirror reflectivity and pump current.

High-temperature characteristics and tunability of long-wavelength vertical-cavity semiconductor optical amplifiers

“…Using low mirror reflectivity, higher carrier density is required, but higher signal gain and lower temperature dependence can be achieved. Low mirror reflectivity also results in high saturation output power and lower noise figure [3], [4].…”

“…Zero offset produces higher room temperature gain, but 10-nm offset results in a smaller QW gain variation over this temperature range. The theoretical analysis of VCSOAs is presented in [4]. We discuss here temperature characteristics of gain.…”

“…We discuss here temperature characteristics of gain. In the same way as [4], we can start with well-known gain formulas of FP amplifiers.…”

“…VCSOAs have been analyzed both experimentally [2] and theoretically [3], [4]. These publications cover fixed-wavelength devices and operation at a constant temperature.…”

Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

“…It also allows for single wavelength amplification, and two dimensional array fabrication; hence lowering the power consumption and manufacturing cost. The narrower bandwidth of the vertical cavity structures makes the devices also good for filtering applications (Piprek, Björlin and Bowers, 2001).…”