Design and Characterization of 1.8–3.2 THz Schottky-Based Harmonic Mixers

Bulcha, Berhanu; Hesler, Jeffrey L.; Drakinskiy, Vladimir; Stake, Jan; Valavanis, Alexander; Dean, Paul; Li, Lianhe; Barker, N. Scott

doi:10.1109/tthz.2016.2576686

Cited by 47 publications

(19 citation statements)

References 23 publications

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“…According to Fig. 4f, g and Supplementary Table 1, the highest f cutoff is found to be over 1 THz and 400 GHz, which are, respectively, from vertical GaAsand Si-based bulk single-crystalline Schottky diodes, since R ct values of those devices are extremely low (10 −7 -10 −8 Ω cm 2 ) and the devices are fabricated with low capacitances 55,56 . Our f cutoff value (27.1 GHz) is located right after them, showing that ours is still outstanding among all other thin-film semiconductors.…”

Section: Resultsmentioning

confidence: 98%

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Yang

Park

et al. 2020

Nat Commun

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Ultra-thin two-dimensional semiconducting crystals in their monolayer and few-layer forms show promising aspects in nanoelectronic applications. However, the ultra-thin nature of two-dimensional crystals inevitably results in high contact resistance from limited channel/ contact volume as well as device-to-device variability, which seriously limit reliable applications using two-dimensional semiconductors. Here, we incorporate rather thick twodimensional layered semiconducting crystals for reliable vertical diodes showing excellent Ohmic and Schottky contacts. Using the vertical transport of WSe 2 , we demonstrate devices which are functional at various frequency ranges from megahertz AM demodulation of audio signals, to gigahertz rectification for fifth-generation wireless electronics, to ultraviolet-visible photodetection. The WSe 2 exhibits an excellent Ohmic contact to bottom platinum electrode with record-low contact resistance (~50 Ω) and an exemplary Schottky junction to top transparent conducting oxide electrode. Our semitransparent vertical WSe 2 Schottky diodes could be a key component of future high frequency electronics in the era of fifth-generation wireless communication.

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Section: Resultsmentioning

confidence: 98%

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Yang

Park

et al. 2020

Nat Commun

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“…At this frequency band, air-filled waveguide is widely adopted as the basic building block for a wide range of devices. Conventional metal machining techniques, such as computer numerical control (CNC) milling, have been successfully used to fabricate waveguide structures up to several THz [9]. However, as the frequency increases, the dimensions of the waveguide structures decrease, and the fabrication becomes more expensive and time consuming.…”

Section: Introductionmentioning

confidence: 99%

A 135–150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

Guo

Huggard

Dhayalan

et al. 2020

IEEE Trans. Microwave Theory Techn.

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This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-µmthick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.

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“…As a low-parasitic device that works well into terahertz region at roomtemperature, Schottky diodes can provide substantial capabilities of power generation, signal detection and frequency conversion for a range of practical THz applications [3]. Examples including mixers that work up to 3.2 THz [4] The associate editor coordinating the review of this manuscript and approving it for publication was Yongle Wu . and frequency multipliers that work up to 2.7 THz [5] have been demonstrated successfully. The development of these components benefits from the advances of diode manufacturing technology [6], modeling technology [7], circuit design method [8] and block manufacturing technology [9].…”

Section: Introductionmentioning

confidence: 99%

Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band

Zhang

et al. 2020

IEEE Access

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Micro-coaxial probe technique (MCPT) is widely used in three-dimensional electromagnetic (3-D EM) modeling of planar Schottky barrier diodes (SBDs) for the design of terahertz multipliers and mixers. However, the inconsistency of port numbers between 3-D EM model and intrinsic model of diode has been pended for years due to the lack of alternative internal port techniques. In this paper, after investigating port techniques available for field simulation software, a novel dual lumped ports technique (DLPT) is proposed to replace the MCPT for removing its non-physical grounding requirement, which makes the defined internal ports have definite physical meaning. Moreover, the proposed DLPT possesses higher accuracy than MCPT for the elimination of epitaxial layer penetration and additional consideration of port coupling effect. Detail technical procedures for DLPT are presented for internal double ports implementation. To verify its feasibility and accuracy at terahertz band, a 110 GHz broadband tripler was designed utilizing the proposed DLPT and the measured results agree well with the simulated ones. Furthermore, a series of frequency multipliers designed by MCPT are post-analyzed with the same models derived from DLPT. Finally, a slight discrepancy is observed between MCPT and DLPT, and the latter coincides better with the measured results. All these results indicate that the proposed DLPT is validated to be effective and accurate for the design of diode frequency multipliers and mixers in terahertz region. INDEX TERMS Micro-coaxial probe technique, dual lumped ports technique, 3-D EM model, schottky barrier diode, diode modeling, frequency multipliers, mixers, terahertz.

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Design and Characterization of 1.8–3.2 THz Schottky-Based Harmonic Mixers

Cited by 47 publications

References 23 publications

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

A 135–150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band

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