Design and Characterization of 10 Gb/s and 1 Grad TID-Tolerant Optical Modulator Driver

Abstract

This paper presents the design and the experimental characterization of a 10 Gb/s electronic driver for silicon Mach-Zehnder modulators (MZMs). This driver is able to operate in harsh environments characterized by radiation levels up to 1 Grad(SiO 2 ) total ionizing dose (TID). To compensate for the detrimental effects that radiation produces on the target 65 nm bulk silicon technology both device-and circuit-level radiation hardened by design (RHBD) techniques are developed and implemented. Extreme TID levels are faced using longchannel transistors with enclosed layout, avoiding the use of p-MOSFETs, and implementing a differential self-biased cascode architecture with common-mode feedback. Band-widening techniques, e.g., inductive peaking, cross-coupled capacitors, and buffer chaining, have been used to improve the driver's frequency response and reach the targeted data rate. Electrical measurements show 10 Gb/s waveforms with an eye diagram amplitude suitable for MZM driving. Electro-optical measurements performed connecting the electronic driver to a silicon photonic MZM confirm the achievement of a 10 Gb/s systemlevel operability. The radiation hardness of the driver is verified by exposing the integrated circuit to X-rays. The measurements confirm the ability of the driver to work up to 1 Grad with an eye amplitude reduction of only 10% and a 7% increment in the rise and fall times, validating the effectiveness of the implemented RHBD techniques.

Compact silicon photonic Mach-Zehnder modulators for high-energy physics

“…effects and efficacy of the implemented countermeasures, fully-integrated SiPh-based transceivers (TRXs) prototypes are already under development to provide next-generation readout systems for high-energy physics (HEP) detectors [16][17][18][19][20]. In comparison to existing optoelectronic modules, SiPh also presents a distinct advantage in terms of transmission capabilities.…”

An Integrated Charge Pump for Phase-Locked Loop Applications in Harsh Environments

“…Non-exhaustive examples of applications in which high temperatures undermine electronics' reliability are space, avionics, and aerospace applications, where the temperature can reach values up to 150 • C [1][2][3][4], as well as automotive and several industrial sectors, where the maximum temperature may reach 200 • C [5,6]. On the other hand, in space and aerospace environments, radiation can severely undermine electronics' reliability [7][8][9]. Therefore, the characterization of electronic components designed to operate in harsh environments needs to be performed in very high-temperature conditions, and in the presence of radiation.…”