Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution

Abstract

A 980 nm bottom-emitting vertical-cavity surface-emitting laser array with a nonuniform linear arrangement is reported to realize emission with a Gaussian far-field distribution. This array is composed of five symmetrically arranged elements of 200 microm, 150 microm, and 100 microm diameter, with center spacing of 300 microm and 250 microm, respectively. An output power of 880 mW with a high power density of 1 kW/cm2 is obtained. The divergence angle is below 20 degrees in the range of operating current from 0 A to 6 A. The theoretical simulation of the near-field and the far-field distribution is in good agreement with the experimental result. The comparison between this nonuniform linear array, the single device, and the conventional two-dimensional array is carried out to demonstrate the good performance of the linear array.

Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy

“…4); thus their energy positions are close to each other at 300 K, which will influence the gain and loss of the two modes and may result in a sign reversion of ΔΓ. The mode splitting obtained by the fitting is about −9.6 GHz at 300 K, which agrees with that reported in [25] (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17).…”

“…Vertical-cavity surface-emitting lasers (VCSEL) have attracted a lot of research interest because of their well-known advantages compared to the other types of lasers, such as single longitudinal mode operation, small beam divergence, low-threshold current, and ease of integrability and testability [1][2][3][4][5][6][7][8]. The zeroorder transverse mode of an ideal rotationally symmetric device structure is expected to be a twofold polarization degeneracy.…”

High-Power-Density High-Efficiency Bottom-Emitting Vertical-Cavity Surface-Emitting Laser Array

“…Additional details of the device and the processing can be found in another article. 6) In particular, instead of the traditional barrier material (GaAs), GaAs 0:92 P (10 nm) is used as the barriers of three In 0:2 GaAs (8 nm) strained quantum wells in the active region.…”

Kardar-Parisi-Zhang universality in the linewidth of non-equilibrium 1D quasi-condensates

“…In this work we study the linewidth of a drivendissipative 1D (quasi-)condensate. Experimentally rel-evant platforms to investigate this physics include lasing in 1D spatially extended systems such as photonic [6] or polariton [7] wires, discrete arrays of polariton micropillars [8,9] or VCSELs [10,11], or even the edge modes of 2D topological lasers [12][13][14][15]. In all these systems, a natural and technologically very relevant observable is the emission linewidth, namely the spectral width of the light emitted from a given point of the device.…”