2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia) 2022
DOI: 10.23919/ipec-himeji2022-ecce53331.2022.9807023
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Design and Characterization of a 500 kW 20 kHz Dual Active Bridge using 1.2 kV SiC MOSFETs

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Cited by 4 publications
(3 citation statements)
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“…In the design described in this paper, high power (350 kW) and high switching frequency (50 KHz) are combined in the same product. The measured peak efficiency in [26][27][28][29] is around 98%: this efficiency can represent a maximum target for the system described in this paper.…”
Section: DCmentioning
confidence: 74%
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“…In the design described in this paper, high power (350 kW) and high switching frequency (50 KHz) are combined in the same product. The measured peak efficiency in [26][27][28][29] is around 98%: this efficiency can represent a maximum target for the system described in this paper.…”
Section: DCmentioning
confidence: 74%
“…Four relevant examples of the implementation of state-of-the-art DAB converters with similar power ratings (100-500 kW) and voltage levels (i.e., 400-800 V) are available in the literature [26][27][28][29]. It is interesting to notice, for all the published DAB converters at this power ratings with state-of-the-art performance, the selected technology in SiC FET modules.…”
Section: DCmentioning
confidence: 99%
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