Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain

Kundu, Anjan; Adhikari, Saikat; Das, Arnima; Kanjilal, Maitreyi Ray; Mukherjee, Moumita

doi:10.1007/s00542-018-4119-4

Cited by 22 publications

(5 citation statements)

References 19 publications

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“…Avalanche carrier generation,

G_{normalavh, normaln} false(x, t false)

, is also nonlinear parameter and can be expressed as [9]

\begin{matrix} right leftthickmathspace.5em \\ G_{avh} (x, t) & = α_{normalh} (x, t) v_{normalh} (x, t) c_{normalh} (x, t) \\ = G_{avn} (x, t) = α_{normaln} (x, t) v_{normaln} (x, t) c_{normaln} (x, t) \end{matrix}

The suitable value of the electric‐field as well as normalised current density in the active layer of the device are obtained by solving the nonlinear Poisson's as well as charge‐carrier transport equations described in (1)–(3), subject to the appropriate boundary conditions [8, 10] at the depletion layer edge. The voltage‐driven, self‐consistent, nonlinear L‐S simulation [11] of the AlGaN/GaN heterostructure MQDD model is done by considering the MITATT device driven by a nonlinear RF voltage source as depicted in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

“…The suitable value of the electric-field as well as normalised current density in the active layer of the device are obtained by solving the nonlinear Poisson's as well as charge-carrier transport equations described in (1)-(3), subject to the appropriate boundary conditions [8,10] at the depletion layer edge. The voltage-driven, selfconsistent, nonlinear L-S simulation [11] of the AlGaN/GaN heterostructure MQDD model is done by considering the MITATT device driven by a nonlinear RF voltage source as depicted in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

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Design and development of an AlGaN/GaN heterostructure nano‐ATT oscillator: experimental feasibility studies in THz domain

Chakraborty

Maity

Mukherjee

2020

Micro & Nano Letters

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Numerical analysis followed by experimental investigations are done with heterostructure GaN/AlGaN single drift MIxed Tunnelling and Avalanche Transit Time (MITATT) devices grown on Si〈111〉 substrate, at around 1 THz. A generalised self-consistent, nonlinear Mixed Quantum Drift-Diffusion (MQDD) simulator is developed and used for designing p ++-n −-n-n ++ type room temperature solid-state source within 0.75-1.1 THz regime. The epitaxial heterojunction layers are grown by III-V nitride molecular beam epitaxy which has enabled the realisation of GaN/AlGaN periodic structure on Si〈111〉 substrate with AlN buffer layer. For the first time, the realisation of heterostructure III-V Nitride MITATT oscillator at sub-mm wave/terahertz (THz) frequencies is done. The device is observed to oscillate at 1 THz with ∼4%. A comparison of MQDD model with experimental (On wafer DC testing) results for heterojunction GaN/AlGaN MITATT diodes shows generalised agreement in terms of breakdown voltage (∼27 V) and efficiency (∼4%). First experimental results of GaN/AlGaN heterostructure MITATT diode are reported and compared with the theoretical predictions obtained through MQDD model.

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“…Avalanche carrier generation,

G_{normalavh, normaln} false(x, t false)

, is also nonlinear parameter and can be expressed as [9]

\begin{matrix} right leftthickmathspace.5em \\ G_{avh} (x, t) & = α_{normalh} (x, t) v_{normalh} (x, t) c_{normalh} (x, t) \\ = G_{avn} (x, t) = α_{normaln} (x, t) v_{normaln} (x, t) c_{normaln} (x, t) \end{matrix}

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and development of an AlGaN/GaN heterostructure nano‐ATT oscillator: experimental feasibility studies in THz domain

Chakraborty

Maity

Mukherjee

2020

Micro & Nano Letters

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“…Recent work on the model of IMPATT diode compared the classical drift diffusion model and hydrodynamic carrier transport model, considering the effects of rapidly varied electric field and the electron energy relaxation effect [30]. A quantum modified classical drift diffusion (QMCLDD) model was developed to study the microscopic level of carrier transport physics and quantum size effects, because the micro level characteristics properties of the superlattice or heterojunction device are not classical but quantum phenomenon [22,31]. Since there are not yet relevant experimental results of GaN-based IMPATT diodes in the literatures working at the millimeter/submillimeter waves, thus more accurate model establishment requires reliable experimental results in the future.…”

Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

Zhang¹,

Yang²,

Yang³

et al. 2020

Semicond. Sci. Technol.

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In this paper, the effects of n-type GaN deep level defects on the DC, small signal AC, and radio frequency (RF) characteristics of Ni/GaN Schottky barrier impact ionization avalanche transit time (IMPATT) diode are investigated. A double avalanche termination region (DATR) structural IMPATT diode is proposed to mitigate the influences caused by these deep level defects. Simulation results show that the internal electric field, carrier generation rate and carrier velocity of IMPATT diode are affected by these deep level defects. With the increase of deep level defects density, the maximum RF output power, DC-to-RF conversion efficiency and optimum frequency of the diode all show a tendency to degenerate correspondingly. Through adjusting the electric field property properly of the diode, the DATR structural IMPATT diode improves the performances of IMPATT diode. The negative peak conductance of the improved diode is 11.4 × 103 S cm−2 at 248 GHz, showing the lowest quality factor of 1.42, the improved maximum RF output power of 1.35 MW cm−2 and DC-to-RF conversion efficiency of 15.7% at 220 GHz under the same deep level defects density, these characteristics of the improved DATR structural IMPATT diode reach the level which the low deep level defects density original diode shows.

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“…To the best of authors' knowledge, this is the first report on single and 3 × 3 array type MGL exotic pin photo-sensor devices (figures 1, 4) at visible wavelength region. The corresponding convergence algorithm is described elsewhere [24].…”

Section: Photo-electric Analysismentioning

confidence: 99%

Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

Modak¹,

Kundu²,

Mukherjee³

2020

Semicond. Sci. Technol.

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The current paper reports the prospects of a multiple-graphene-layer (MGL) based vertically doped p ++ -n-n --n ++ avalanche photo-sensor in visible wavelength region (300 nm-800 nm). High carrier mobility, intrinsic optical and mechanical properties in graphene at room temperature, have made this material promising for various novel applications. The authors have used an indigenously developed and experimentally verified quantum-corrected field maximum classical drift-diffusion (QCFMCDD) mathematical model for studying the optical characteristics of MGL based p ++ -n-n --n ++ avalanche photo-diode sensor. The validity of the simulator is established through a comparative study between the experimental and analytical observations under similar operating (structural/electrical/thermal) conditions. Additionally, the superiority of the QCFMCDD model over the conventional classical drift-diffusion model is established through this comprehensive study. The analysis reveals that the opto-electrical properties of the device-under-test improve significantly as a result of the incorporation of MGL in the low doped active region. The authors have compared the results with those of a Si/4H-SiC super-lattice avalanche photo-sensor at 500 nm wavelength of incident radiation. It is observed that graphene outperforms its Si/4H-SiC counterpart in terms of photo-responsivity (0.820 A W −1 vs. 0.650 A W −1 ) and quantum efficiency (84% vs. 62%) for optical irradiation with visible laser source. The opto-electrical performance of the 3 × 3 array type graphene photo-sensor is further analyzed and compared with those of its single array counterpart. The photo-responsivity as well as quantum efficiency increases by at least 30% in the case of the 3 × 3 photo-sensor array. In comparison to available photo detectors, reported so far in published literature, the designed photo-sensor shows overall performance betterment in the visible wavelength region. To the best of authors' knowledge, this is the first report on MGL based 3 × 3 array type ultra fast highly sensitive visible avalanche diode photo-sensor.

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Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain

Cited by 22 publications

References 19 publications

Design and development of an AlGaN/GaN heterostructure nano‐ATT oscillator: experimental feasibility studies in THz domain

Design and development of an AlGaN/GaN heterostructure nano‐ATT oscillator: experimental feasibility studies in THz domain

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

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Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain

Cited by 22 publications

References 19 publications

Design and development of an AlGaN/GaN heterostructure nano‐ATT oscillator: experimental feasibility studies in THz domain

Design and development of an AlGaN/GaN heterostructure nano‐ATT oscillator: experimental feasibility studies in THz domain

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

Multiple-graphene layer based p++–n–n−–n++ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

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Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor