Design and Characterization of ESD Protection Devices for High-Speed I/O in Advanced SOI Technology

Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection

“…6 suggest that the leakage current of a Poly-DTSCR can likely be reduced below the value shown in Table II simply by changing the gate connection from the anode to the cathode (p + to n + ). Measurement results indicate that such a change also reduces the capacitance of the diode and does not affect its ESD performance, results confirmed by the data in [23] and [24].…”

Performance Assessment of Nanoscale Field-Effect Diodes

“…We have shown that field-effect diodes (FEDs) have superior characteristics over silicon-on-insulator metal-oxide-semiconductor field-effect transistors (SOI-MOSFETs) due to suppressed short-channel effects [2]- [4]. FEDs have been used for electrostatic-discharge protection [5]- [7] and memory-cell applications [8], [9].…”

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology

“…To overcome the turn-on limitations of the SCR, improved devices such as the double-well field-effect diode (DWFED) [21,22] (Fig. 3) and the field-effect diode (FED) (Fig.…”

“…For the DWFED (Fig. 3), a 0.2 lm silicide block is used to block part of the P+ implant, thereby extending the NW, creating an asymmetric device [22]. The extended well dimension lengthens the base width, increasing the device's turn-on voltage to above the normal V dd range, effectively reducing the leakage current during normal operational conditions.…”