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Abstract-A new charge pump circuit with consideration of gateoxide reliability is designed with two pumping branches in this paper. The charge transfer switches in the new proposed circuit can be completely turned on and turned off, so its pumping efficiency is higher than that of the traditional designs. Moreover, the maximum gate-source and gate-drain voltages of all devices in the proposed charge pump circuit do not exceed the normal oper-

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Overview on the prior designs of the mixed-voltage I/O buffers is provided in this work. A new 2.5/5-V mixed-voltage I/O buffer realized with only thin gate-oxide devices is proposed. The new proposed mixed-voltage I/O buffer with simpler dynamic n-well bias circuit and gate-tracking circuit can prevent the undesired leakage current paths and the gate-oxide reliability problem, which occur in the conventional CMOS I/O buffer. The new mixed-voltage I/O buffer has been fabricated and verified in a 0.25-m CMOS process to serve 2.5/5-V I/O interface. Besides, another 2.5/5-V mixed-voltage I/O buffer without the subthreshold leakage problem for high-speed applications is also presented in this work. The speed, power consumption, area, and noise among these mixed-voltage I/O buffers are also compared and discussed. The new proposed mixed-voltage I/O buffers can be easily scaled toward 0.18-m (or below) CMOS processes to serve other mixed-voltage I/O interfaces, such as 1.8/3.3-V interface. Index Terms-Gate-oxide reliability, gate-tracking circuit, interface, mixed-voltage I/O buffer.

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