Design of Charge Pump Circuit With Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes

Ker, Ming‐Dou; Chen, Shih-Lun; Tsai, Chao-Ming

doi:10.1109/jssc.2006.872704

Cited by 182 publications

(75 citation statements)

References 22 publications

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“…Ongoing research is addressing improved approaches for device packaging to more substantially compensate temperature variations as well as to reduce the hysteresis in response due to stress relaxation (in the adhesive) following cyclic loading on the device. An on-chip DC bias generator based on a charge pump circuit [43] is being developed to eliminate the cumbersome high voltage batteries at the expense of some increase in power consumption [44]. Integration of the MEMS strain sensor into a wireless sensor network for infrastructure monitoring is also being pursued.…”

Section: Summary and Future Workmentioning

confidence: 99%

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

Erbes

Yan

et al. 2016

J. Microelectromech. Syst.

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Abstract-This paper describes a technical approach towards the realization of a low-power temperature-compensated micromachined resonant strain sensor. The sensor design is based on two identical and orthogonally-oriented resonators where the differential frequency is utilized to provide an output proportional to the applied strain with temperature compensation achieved to first order. Interface circuits comprising of two front-end oscillators, a mixer and low-pass filter are designed and fabricated in a standard 0.35µm CMOS process. The characterized devices demonstrate a scale factor of 2.8Hz/µε over a strain range of 1000µε with excellent linearity over the measurement range. The compensated frequency drift due to temperature is reduced to 4% of the uncompensated value through this scheme. The total continuous power consumption of the strain sensor is 3µW from a 1.2V supply. This low power implementation is essential to enable battery-powered or energy harvesting enabled monitoring applications.

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Section: Summary and Future Workmentioning

confidence: 99%

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

Erbes

Yan

et al. 2016

J. Microelectromech. Syst.

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“…5b. These dual-branch structures were introduced to lower ripples in the CTS design (Kleveland, 2002;New et al, 2012) and later evolved into latch-based designs (Nakagome et al, 1991;Gariboldi and Pulvirenti, 1994;1996;Favrat et al, 1998;Pelliconi et al, 2003;Ker et al, 2006;Che et al, 2009;Chen et al, 2010;Ulaganathan et al, 2012;Peng et al, 2014;Kim et al, 2015) which are currently gaining popularity. These structures have V OUT similar to Equation 1 but with reduced charge transfer intervals of T/2 (Palumbo and Pappalardo, 2010), circuit minimization with smaller C PUMP values and half the ripple, V R compared to single branch CPs where V R is expressed as V R = I OUT T/[2(C OUT +C PUMP )] (Pan and Samaddar, 2010) assuming C OUT >> C PUMP .…”

Section: Dual-branch Charge Pumpmentioning

confidence: 99%

“…The Cross-Coupled CPs were originally proposed in (Gariboldi and Pulvirenti, 1994;1996) and later implemented as a four stage cascaded version in Ker et al (2006) CP design. The Cross-Coupled topologies are realized with cross-coupled switches driven by antiphase clocks for boosted voltages.…”

Section: Cross-coupled Charge Pumpmentioning

confidence: 99%

“…Since this CrossCoupled CP normally fails to work below V TH , several schemes were introduced to mitigate this. The following elaborates some evolved structures since the classical latched CP design in (Gariboldi and Pulvirenti, 1994) beginning with Ker et al (2006) structure to the most recent of developments. Ker et al (2006) CP (Fig.…”

Section: Cross-coupled Charge Pumpmentioning

confidence: 99%

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Review of Charge Pump Topologies for Micro Energy Harvesting Systems

Mi¹,

Islam

Sampe

et al. 2016

American Journal of Applied Sciences

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This paper reviews CMOS based charge pump topologies used within autonomous embedded micro-systems. These charge pump structures have evolved from its simplistic diode-tied, single-branches with major threshold drops to exponential type, dual-branches with sophisticated gate and substrate control for lower voltage operation. Published charge pumps are grouped based on architecture, operation principles and pump optimization techniques with their pros and cons compared and results contrasted. The various charge pump topologies and schemes used are considered based on pumping efficiency, power efficiency, charge transferability, circuit complexity, pumping capacitors, form factor and minimum supply voltages with an optimum load. This article concludes with an overview of suitable techniques and recommendations that will aid a designer in selecting the most suitable charge pump topology especially for low ambient micro energy harvesting applications.

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“…2. Typically, the charge pump circuit realized with low-voltage transistor for reducing the parasitic capacitance and the physical layout size [7].…”

Section: Introductionmentioning

confidence: 99%

Soft pre-charge H/V switch for charge pump with NAND flash memory using external power

Kim

Lee

2013

IEICE Electron. Express

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This letter describes a soft pre-charge high voltage switch for a program/erase charge pump (P/E Pump) with NAND flash memory using an external high voltage of 12 V. The use of a external high voltage reduces the P/E Pump stage and improves the power efficiency. The external high voltage is used as input power of the P/E Pump. The soft pre-charge high voltage switch is proposed to transfer the external high voltage without a breakdown issue. The proposed high voltage switch passes the external high voltage of +12 V to be ramped up linearly at the start-up phase.

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Design of Charge Pump Circuit With Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes

Cited by 182 publications

References 22 publications

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

Review of Charge Pump Topologies for Micro Energy Harvesting Systems

Soft pre-charge H/V switch for charge pump with NAND flash memory using external power

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