Design and characterization of the monolithic matrices of the H35DEMO chip

Mohr, Raimon Casanova; Cavallaro, E.; Foster, F. G.; Grinstein, S.; Perić, I.; Puigdengoles, C.; Terzo, Stefan; Figueras, E. Vilella

doi:10.22323/1.313.0029

Cited by 3 publications

(6 citation statements)

References 4 publications

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“…3Results of irradiated modules from FNAL beam test are not reported in this paper, but can be found in ref [9].…”

Section: Samples and Irradiationsmentioning

confidence: 99%

“…A detailed description of analog and digital architectures of the standalone matrices can be found in refs. [5,9]. In the following only the characteristics relevant to the presented measurements will be discussed.…”

Section: The H35demo Demonstratormentioning

confidence: 99%

“…Arrangement of the pixel CMOS matrix and its periphery with block diagrams of analog and digital front-end electronics. The analog front-end electronics are integrated on pixel while the digital electronics are placed in the periphery[9].…”

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confidence: 99%

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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

et al. 2019

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A: Monolithic Active Pixel Sensors (MAPS) produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the High Luminosity LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration . It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices was characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200 Ωcm irradiated with neutrons showed a radiation hardness up to a fluence of 1 × 10 15 n eq /cm 2 with a hit efficiency of about 99 % and a noise occupancy lower than 10 −6 hits in a LHC bunch crossing of 25 ns at 150 V.

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“…3Results of irradiated modules from FNAL beam test are not reported in this paper, but can be found in ref [9].…”

Section: Samples and Irradiationsmentioning

confidence: 99%

Section: The H35demo Demonstratormentioning

confidence: 99%

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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

et al. 2019

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“…in which the analog electronics are embedded in a Deep N-WELL (DNWELL) also acting as the collecting electrode. More details about this chip and the CMOS matrix characterisation before irradiation can be found in [4,5].…”

Section: H35demomentioning

confidence: 99%

Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates

Terzo¹,

Benoit²,

Cavallaro³

et al. 2019

Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)

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“…The design, as seen in figure 1, includes four independent sub-matrices: the NMOS and CMOS monolithic matrices integrating sensor and readout electronics into the same die and the two analog matrices 1 and 2 designed for capacitive-coupling to the FE-I4 readout ASIC [8], in order to decouple readout electronics aspects from sensor diode properties. The monolithic matrices were tested before and after irradiation and demonstrated good performance of the readout circuitry required for the monolithic integration of CMOS pixel sensors in ams HV-CMOS technology [9,10]. The pixels in the analog matrix, measuring 250 µm × 50 µm, contain a large collection diode in which the amplification circuitry is implemented.…”

Section: The H35demo Demonstrator Chipmentioning

confidence: 99%

Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate

Benoit¹,

Terzo²,

Muenstermann³

et al. 2018

J. Inst.

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A : In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from 80 Ω cm to 1000 Ω cm. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 180 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.

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Design and characterization of the monolithic matrices of the H35DEMO chip

Cited by 3 publications

References 4 publications

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates

Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate

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