2022
DOI: 10.1002/pssa.202100606
|View full text |Cite
|
Sign up to set email alerts
|

Design and Comparative Performance Analysis of High‐Efficiency Lead‐Based and Lead‐Free Perovskite Solar Cells

Abstract: Recently, the attention of photovoltaic (PV) community has been switched to a newcomer in the PV industry, namely the perovskite solar cells (PSCs) owing to their high power conversion efficiency (PCE), suitable band alignment, high diffusion length of charge carriers, and efficient photon absorption in the visible and near IR region of the electromagnetic spectrum. The continuing research efforts to improve the performance parameters of PSCs have improved the PCE from 3.9% in 2009 to a high value of 25.6% in … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 18 publications
(6 citation statements)
references
References 53 publications
0
6
0
Order By: Relevance
“…In this simulation model, ideal perovskite devices are meticulously optimized without considering R series and R shunt resistances. This impractical step is a key factor in determining the maximum limit of device performance achieving highly stable photovoltaic performance parameters when considering optimal operation 51 . To validate and verify our simulated model, the recently reported experimental works for the similar planar n-i-p structure (FTO/TiO 2 /FAPbI 3 or MAPbI 3 /Spiro-OMeTAD/Au) obtained by Michael Grätzel et.…”
Section: Resultsmentioning
confidence: 99%
“…In this simulation model, ideal perovskite devices are meticulously optimized without considering R series and R shunt resistances. This impractical step is a key factor in determining the maximum limit of device performance achieving highly stable photovoltaic performance parameters when considering optimal operation 51 . To validate and verify our simulated model, the recently reported experimental works for the similar planar n-i-p structure (FTO/TiO 2 /FAPbI 3 or MAPbI 3 /Spiro-OMeTAD/Au) obtained by Michael Grätzel et.…”
Section: Resultsmentioning
confidence: 99%
“…The contour plots reveal that as N A values increase, V oc rises but declines with t ab . In scenarios involving a p-type light absorption layer, the sheet resistance of the absorber layer hampers hole mobility towards the HTL at higher doping densities [49]. As N A increases, the built-in potential also increases, leading to a higher electric field, which facilitates efficient separation of photo-generated carriers, consequently raising V oc [50].…”
Section: Effect Of Absorber Layer Thickness and Absorber Acceptor Den...mentioning
confidence: 99%
“…Electron capture cross section [cm 1.4×10 14 [25] 1×10 16 [ 26] The current densities J p and J n represent the flow of holes and electrons, respectively. Additionally, G op corresponds to the optical generation rate, while R indicates the combined recombination rate.…”
Section: Simulation Detailsmentioning
confidence: 99%