Design and demonstration of C-band static induction transistors in 4H silicon carbide

Numerical Simulation of Field Effect Transistors in 4H- and 6H-SiC

“…For a device with a 75 Â 75 mm 2 pad-size, the optimal f T was found to be 7.5 GHz. This is in very good agreement with the experimental result in [15] with a f T of 7 GHz. Simulation of exactly the same structure as in [16] resulted in a simulated value of 7.1 GHz [15].…”