Design and Demonstration of High Power Density Inverter for Aircraft Applications

Nawawi, Arie; Tong, C. F.; Yin, Shengyan; Sakanova, Assel; Liu, Yitao; Liu, Yong; Men, Kai; See, Kye Yak; Tseng, King Jet; Simanjorang, Rejeki; Gajanayake, Chandana Jayampathi; Gupta, Amit Kumar

doi:10.1109/tia.2016.2623282

Cited by 92 publications

(28 citation statements)

References 12 publications

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“…Furthermore, one important distinct feature of the proposed topology is that it can be form by just two 2L commutation cells. This feature is important due to the fact that currently for high current ratings there is no commercial availability of 3L modules [47,48] in the market. Thus, the proposed topology is an interesting option to build a high performance high current 3L converter with presently available half bridge power modules.…”

Section: Discussionmentioning

confidence: 99%

Asymmetrical Three-Level Inverter SiC-Based Topology for High Performance Shunt Active Power Filter

Iturra

Thiemann

2019

Energies

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Power quality conditioner systems, such as shunt active power filters (SAPFs), are typically required to have low power losses, high-power density, and to produce no electromagnetic interference to other devices connected to the grid. At the present, power converters with such a features are built using multilevel topologies based on pure silicon semiconductors. However, recently new semiconductors that offer massive reduction of power losses such as silicon carbide (SiC) MOSFETs have been introduced into the power electronics field. In the near future, the applications that demand the highest performance will be powered by multilevel converters based on SiC. In this paper a highly efficient three-level (3L) topology based entirely on silicon carbide (SiC) semiconductors for a SAPF is presented and analyzed in great detail. Furthermore, the proposed topology is compared with other full SiC-based conventional topologies: two level (2L), three-level T-type (3L-TNPC), and three-level neutral-point-clamped (3L-NPC) in terms of efficiency. The proposed asymmetrical topology has an efficiency superior to conventional all SiC 2L and 3L power circuits when the pulse or switching frequency of the system is set higher than 60 kHz. Further, for high current ratings, the asymmetrical topology has the advantage that it can be built just by cascading two half-bridge SiC modules.

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Section: Discussionmentioning

confidence: 99%

Asymmetrical Three-Level Inverter SiC-Based Topology for High Performance Shunt Active Power Filter

Iturra

Thiemann

2019

Energies

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“…It should be noted that L total is the sum of all the inductive component along the power loop, including both PCB inductance and parasitic inductance within the device package. According to the measured ringing frequency, it is then possible to obtain this total loop inductance according to equation (1). However, the GaN transistor has a ultra low output capacitor (33 pF for the selected transistor at 400 V drain-source voltage).…”

Section: A Parasitic Analysis In Buck Convertermentioning

confidence: 99%

“…GaN transistor has been introduced as a promising solution for high power density converter design [1] [2]. High frequency switching largely shrinks the volume of the converter passive components.…”

Section: Introductionmentioning

confidence: 99%

Multi-physic Analysis for GaN Transistor PCB Layout

Sun

Jørgensen

Zhang

et al. 2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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PCB layout for Gallium Nitride (GaN) transistor power loops are critical for achieving a stable operation in power converters. Optimal design should minimize the parasitic inductance as well as provide a low thermal resistance for heat dissipation. A multi-physic evaluation of performance between different PCB designs are made and a novel layout is proposed in this paper. The parasitic inductance and heat distribution of each layout are compared. The parasitic inductance is obtained from the oscillation frequency of the transistor drain-source voltage ringing. The thermal comparison is done with a combination of measurements and calculations. To ensure identical operating conditions, the buck converter adopts a modular design idea, where the plug-in totem poles of different designs are placed on the same motherboard. An optimized strategy for GaN transistor layout is given.

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“…Figure 1 shows the power generation capacity from the main sources of RE. The DC/AC converters are used in a wide variety of applications, from power supplies [7][8][9], to high-power industrial applications [10][11][12]. At present, they are also used as an interface for the control of motors for electric vehicles [13].…”

Section: Introductionmentioning

confidence: 99%

Leakage Current Reduction in Single-Phase Grid-Connected Inverters—A Review

et al. 2020

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The rise in renewable energy has increased the use of DC/AC converters, which transform the direct current to alternating current. These devices, generally called inverters, are mainly used as an interface between clean energy and the grid. It is estimated that 21% of the global electricity generation capacity from renewable sources is supplied by photovoltaic systems. In these systems, a transformer to ensure grid isolation is used. Nevertheless, the transformer makes the system expensive, heavy, bulky and reduces its efficiency. Therefore, transformerless schemes are used to eliminate the mentioned disadvantages. One of the main drawbacks of transformerless topologies is the presence of a leakage current between the physical earth of the grid and the parasitic capacitances of the photovoltaic module terminals. The leakage current depends on the value of the parasitic capacitances of the panel and the common-mode voltage. At the same time, the common-mode voltage depends on the modulation strategy used. Therefore, by the manipulation of the modulation technique, is accomplished a decrease in the leakage current. However, the connection standards for photovoltaic inverters establish a maximum total harmonic distortion of 5%. In this paper an analysis of the common-mode voltage and its influence on the value of the leakage current is described. The main topologies and strategies used to reduce the leakage current in transformerless schemes are summarized, highlighting advantages and disadvantages and establishing points of comparison with similar topologies. A comparative table with the most important aspects of each converter is shown based on number of components, modes of operation, type of modulation strategy used, and the leakage current value obtained. It is important to mention that analyzed topologies present a variation of the leakage current between 0 to 180 mA. Finally, the trends, problems, and researches on transformerless grid-connected PV systems are discussed.

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Design and Demonstration of High Power Density Inverter for Aircraft Applications

Cited by 92 publications

References 12 publications

Asymmetrical Three-Level Inverter SiC-Based Topology for High Performance Shunt Active Power Filter

Asymmetrical Three-Level Inverter SiC-Based Topology for High Performance Shunt Active Power Filter

Multi-physic Analysis for GaN Transistor PCB Layout

Leakage Current Reduction in Single-Phase Grid-Connected Inverters—A Review

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