Design and development of high-etch-rate organic bottom antireflective coating for sub-100-nm node and beyond

Wu, Huixiang; Xiang, Zhong; Hishida, Aritaka; Abdallah, David J.; Shan, Jianhui; Gonzalez, Eleazar; Ding, Shuji; Neisser, Mark

doi:10.1117/12.537883

Cited by 5 publications

(6 citation statements)

References 2 publications

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“…(1) Higher etch rates for BARC materials compared with that of a resist to decrease resist thickness loss and for gap fill material layers with respect to porous ultralowk films to avoid crowning or fencing on top of the trench after etching in dual damascene processes. [13][14][15] (2) Solvent resistance to resist and BARC solvents to prevent intermixing with the upper layer and good resist profiles with a wider depth-of-focus margin on BARC materials for ArF lithography. (3) High fluidity for good via filling properties, e.g., voidfree filling, sufficient top coverage, a low dimple depth, and less thickness bias between the isolated portion and the dense portion in via-first dual damascene processes using gap fill and BARC materials.…”

Section: Resultsmentioning

confidence: 99%

Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography

Takei

Shinjo

Sakaida

2007

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Sudden increases in the background gamma-radiation dose may occur due to the removal of 222 Rn and 220 Rn progeny from the atmosphere by wet deposition mechanisms. This contribution has been measured using a Geiger-Muller detector at the Atomic Weapons Establishment (Aldermaston, UK) during July 2005-April 2006. The results are approximated by a log-normal distribution and there were nine separate occurrences of the gamma-radiation dose exceeding 125% of the geometric mean value. The increases were associated with periods of heavy rainfall, although no correlation was evident between the dose rate and the amount of rainfall, as increased rainfall dilutes the activity further rather than increasing its atmospheric removal. The events were preceded by periods of fine weather and atmospheric stability that allow for the build-up of 222 Rn and 220 Rn progeny. Similar increases in gamma-radiation dose have been measured at a nearby monitoring station situated approximately 11 miles from Aldermaston. Increases in gamma-radiation dose during heavy rainfall have also been observed throughout the UK, that followed the trajectory of an air mass. All events decreased to typical values within 1-2 h as the water permeated into the ground below and the radioactivity decayed away.

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Section: Resultsmentioning

confidence: 99%

Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography

Takei

Shinjo

Sakaida

2007

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“…The high etch rate of the gap fill materials with respect to porous ultra low-k films is needed to avoid crowning or fencing on top of the trench after etching in a Dual Damascene process. [13][14][15] Finally, the appropriate flow properties of the gap fill materials during spin coating and low thermal film shrinkage during baking are required for good via filling properties, e.g., void-free filling, a sufficient top coverage, a small dimple depth, and a small iso dense bias across the wafer.…”

Section: Design Concept Of Gap Fill Materialsmentioning

confidence: 99%

“…The high etch rate of the gap fill materials is needed to prevent crowning or fencing on top of the trench after etching is completed. [12][13][14] On the other hand, most commercial gap fill materials consist of linear polymers, such as acryl polymers, novolac and poly(4-hydroxystyrene) (PHS) derivatives. If a ringshaped molecule is used in the sacrificial materials under the photoresist, a superior etch rate can be expected owing to the large nanoscale porous chemical structure.…”

Section: Introductionmentioning

confidence: 99%

Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

Takei

Shinjo

Sakaida

et al. 2007

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We determine the geometry of supersymmetric heterotic string backgrounds for which all parallel spinors with respect to the connection∇ with torsion H, the NS⊗NS three-form field strength, are Killing. We find that there are two classes of such backgrounds, the null and the timelike. The Killing spinors of the null backgrounds have stability subgroups K R 8 in Spin(9, 1), for K = Spin(7), SU (4), Sp(2), SU (2) × SU (2) and {1}, and the Killing spinors of the timelike backgrounds have stability subgroups G 2 , SU (3), SU (2) and {1}. The former admit a single null∇-parallel vector field while the latter admit a timelike and two, three, five and nine spacelike∇-parallel vector fields, respectively. The spacetime of the null backgrounds is a Lorentzian two-parameter family of Riemannian manifolds B with skew-symmetric torsion. If the rotation of the null vector field vanishes, the holonomy of the connection with torsion of B is contained in K. The spacetime of time-like backgrounds is a principal bundle P with fibre a Lorentzian Lie group and base space a suitable Riemannian manifold with skew-symmetric torsion. The principal bundle is equipped with a connection λ which determines the non-horizontal part of the spacetime metric and of H. The curvature of λ takes values in an appropriate Lie algebra constructed from that of K. In addition dH has only horizontal components and contains the Pontrjagin class of P . We have computed in all cases the Killing spinor bilinears, expressed the fluxes in terms of the geometry and determine the field equations that are implied by the Killing spinor equations.

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“…Etch rates of BARC films depend on all the components within the formulation, however, the polymer which has the highest solid weight content is believed to have the most impact. Understanding how polymer structure, chemical bonding and chemical elements that comprise the polymer affect etch rate would be very helpful in designing high etch rate products [1,2] . There are a few empirical mathematical models in the literature that predict the relationship between intrinsic make up of a polymer and its etch rate.…”

Section: Introductionmentioning

confidence: 99%

The effects of etch chemistry on the etch rates of ArF BARC products

et al. 2006

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As the feature sizes of integrated circuits shrink, highly anisotropic etching process (i.e., ion-assisted plasma etch, or reactive ion etch (RIE)), becomes even more essential for successful pattern transfer in the fabrication of semiconductor devices. The stringent 193 nm lithography process necessitates the use of bottom anti-reflective coating (BARC) for controlling reflections and improving swing ratios. Prior to RIE of a patterned wafer, the BARC layer must first be opened to allow pattern transfer from the resist mask to the underlying films. As we enter the era of sub-90nm imaging, minimum loss of the photoresist during the BARC open step is becoming more critical, since the demand for higher optical resolution dictates the use of ever thinner resist films. This in turn requires higher etch rate of BARC materials.In this paper we report on the impact of etching gas chemistries on the etch rates of BARC materials. The correlation between the etch chemistry and BARC products will be discussed. Reactive ion etch rates for blanket BARC coatings and BARCs under resist patterns were measured. Etch rates of BARC products of various material compositions were measured with a typical ArF resist as reference. It is well known that the chemical composition and structure of organic materials essentially determine the etch rates under certain etch process conditions. The correlations between etch rates and BARC polymer chemistry are reported. Etch chemistries, (i.e. the chemical interaction of plasma reactive ions with BARC materials), may also have profound effects on etch rates. Here we report on results obtained using four etching gas chemistries to study how oxygen contents, polymerizing gases, and inert gas effect the etch rates of different ArF BARC products.

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Design and development of high-etch-rate organic bottom antireflective coating for sub-100-nm node and beyond

Cited by 5 publications

References 2 publications

Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography

Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography

Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

The effects of etch chemistry on the etch rates of ArF BARC products

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