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Spin-on trilayer materials are increasingly being integrated in high density microfabrication that use high NA ArF lithography due to dwindling photoresist film thicknesses, lower integration cost and reduced complexity compared to analogous CVD stacks. To guide our development in spin-on trilayer materials we have established etch conditions on an ISM etcher for pattern transfer through trilayer hard masks. We report here a range of etch process variables and their impact on after-etch profiles and etch selectivity with AZ trilayer hard mask materials. Trilayer pattern transfer is demonstrated using 1 st and 2 nd minimum stacks with various pattern types. Etch recipes are then applied to blanket coated wafers to make comparisons between etch selectivities derived from patterned and blanket coated wafers.

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