Design and evaluation of ARC less InGaP/AlGaInP DJ solar cell

Abbasian, Sobhan; Sabbaghi‐Nadooshan, Reza

doi:10.1016/j.ijleo.2017.02.078

Cited by 7 publications

(8 citation statements)

References 12 publications

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“…The performance of a solar cell is determined by the efficiency and is obtained as [16]: Table 2. In S. Abbasian et al [6], semiconductor In 0.5 (Al 0.7 Ga 0.3 ) 0.5 P decreased in the cells, which increased the electrical field. This resulted in fewer recombinations; thus, the use of heterojunction GaAs/AlInPcells on the bottom reduced the recombination of cells and increased efficiency.…”

Section: Efficiencymentioning

confidence: 91%

“…Charge carriers produced by irradiation of photons are separated at the p-n junction and back surface field (BSF) layer, which reduces surface recombination of charge carriers by producing an electric field. The tunnel junction provides conditions for passage of the charge carriers from a route having low resistance by creating a low-width discharge area [4][5][6][7][8]. Figure 1 shows a dual-junction solar cell.…”

Section: Structure Of Multi-junction Cellsmentioning

confidence: 99%

“…Nayak et al reported a efficiency of 39.15% under radiation of AM1.5 (1000 sun) by creating an extra electric field using two back surface field (BSF) layers [5]. Abbasian et al used semiconductors in 0.5 (Al 0.7 Ga 0.3 ) 0.5 P at low irradiation and arrived at 53.51% efficiency under radiation of AM1.5G (1 sun) [6].…”

Section: Introductionmentioning

confidence: 99%

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Introducing a novel high-efficiency arc less heterounction DJ solar cell

Abasian

Sabbaghi‐Nadooshan

2018

FACTA U EE

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The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ѵш group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al 0.52 In 0.48 P, GaAs and In 0. 49 Ga 0. 51 P), it was concluded that the semiconductor Al 0.52 In 0.48 P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (J SC) = 22.96 mA/cm 2 , open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(η)= 58.28% were obtained under AM1.5 (1 sun) of radiation.

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Section: Efficiencymentioning

confidence: 91%

Section: Structure Of Multi-junction Cellsmentioning

confidence: 99%

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Introducing a novel high-efficiency arc less heterounction DJ solar cell

Abasian

Sabbaghi‐Nadooshan

2018

FACTA U EE

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“…where V bi is the internal potential in both sides of the junction [28]. The in vitro findings of references [29] and [30] were used to conclude that In 0.5 (Al 0.7 Ga 0.3 ) 0.5 P semiconductors increase the open-circuit voltage and the Vbi in the semiconductor.…”

Section: Electric Fieldmentioning

confidence: 99%

“…The absorption coefficient is obtained from the Eq. 11, k coefficient has a positive relationship with the absorption coefficient of a material [28]:…”

Section: Photogeneration Ratementioning

confidence: 99%

Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

Abbasian

Sabbaghi‐Nadooshan

2020

FACTA U EE

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In this work, a GaAs-based quantum well solar cell with a 25-layer InAs/GaAs intermediate layer is simulated in Silvaco Atlas TCAD software. In order to reduce the recombination caused by the presence of the quantum layers and increase the absorption of photons, electron blocking layers (EBLs) and hole blocking layers (HBLs) have been added to the solar cell in an In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor. The results show that the efficiency of the proposed solar cell increases 17.38% by obtaining impurity the thickness and doping of the EBL and HBL layers. It can be concluded that the use of the In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor with EBL and HBL layers decreases the open circuit voltage (V oc) caused in the quantum wells. The efficiency of the proposed solar cell with EBL and HBL layers was found to be 44.65%.

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