Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal

Yuan, Hao; Song, Qi; Tang, Xiaoyan; Zhang, Yimeng; Zhang, Yuming

doi:10.1016/j.sse.2016.05.014

Cited by 16 publications

(5 citation statements)

References 14 publications

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“…[10] Ref. [5] This work Then, the number of rings and corresponding distances can be obtained. The results are shown in Figure 4.…”

Section: Table 1 Comparison Of Termination Efficiency With Previous Workmentioning

confidence: 99%

“…To withstand high voltage, junction termination is a must for vertical power devices. Junction termination extension (JTE) and floating field rings (FFR) are the most widely used terminations for power devices [3][4][5]. JTE provides a simple method, but the design window is quite narrow [3,4] and is sensitive to interface charges [6].…”

mentioning

confidence: 99%

“…A combined termination with JTE and FFR widens the design window [7], but increases the cost. FFR has a wider design window [5] and can be implemented using P + implantation for the active region or P-base implantation for MOSFET, which can help save costs. But designing the number of rings and non-uniform distance to obtain a high breakdown voltages is complicated, especially for ultra-high breakdown voltage where the number of rings can easily exceed dozens.…”

mentioning

confidence: 99%

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Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Zhang,

Zhou,

et al. 2024

Electronics Letters

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This letter, proposes and experimentally demonstrates a simple and efficient estimating method for high‐voltage floating field ring (FFR). Four rings in FFR are used to determine the influence of rings’ distance (d) on the voltage drops of the highest voltage to the third ring (Vn+1) and the third to the second ring (Vn). Then, two voltage curves (curves for Vn+1 and Vn) based on d are drawn. For a target breakdown voltage, by iterating between the curves for Vn+1 and Vn, the number of FFRs and corresponding distances can be found. Based on this method, an 8.0 kV PN diode with 111 FFRs is designed and fabricated. The measured breakdown voltage is 7840 V, which reaches 98% of the designed value. This method provides a simple and efficient design for high‐voltage SiC devices, especially for ultra‐high voltage applications where the number of rings exceeds dozens.

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“…[10] Ref. [5] This work Then, the number of rings and corresponding distances can be obtained. The results are shown in Figure 4.…”

Section: Table 1 Comparison Of Termination Efficiency With Previous Workmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Zhang,

Zhou,

et al. 2024

Electronics Letters

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“…The protection efficiency is very sensitive to the spacing of the ring junctions. In most ring-system design, the conventional designs are equal spacing [7] and linearly increased spacing [8][9][10]. The protection efficiency can reach from 42% to 91%.…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

Sang

Yang

et al. 2020

MSF

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Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabricated. Experimental results show that the SiC JBS diode with optimized non-uniform MFFLR termination structure can achieve a breakdown voltage of up to 7800 V, and its termination efficiency is about 94% of an ideal parallel-plane junction’s. Our results demonstrate that the optimized non-uniform MFFLR termination structure is capable for SiC JBS diodes with breakdown voltage of 6500V and above. Our results can provide a valuable design methodology of edge termination structures for other high-voltage SiC devices.

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“…[6][7] However, if only completing the contacts on one kind epitaxial layer will limit the scope of the application, such as power metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), etc. [8][9] Additionally, Simultaneous formation of ohmic contacts for both n-and p-type semiconductors using the same contact materials and a one-step annealing process will simplify the device fabrication processes and miniaturize the cell sizes.…”

Section: Introductionmentioning

confidence: 99%

Extremely Thermal Stable Ni/W/TaSi<sub>2</sub>/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC

Zhang

Tang

et al. 2018

MSF

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Studying the ohmic contacts formed on ion-implanted SiC layers is fundamental to understand and to predict the behavior of practical devices. Ohmic contacts to n- (1×1019cm−3) and p-type (1×1020cm−3) ion-implanted 4H-SiC using Ni/W/TaSi2/Pt were investigated. No degradation of the specific contact resistance nor a minute change of the surface morphologies was observed after 300 h of 500 oC thermal treatment in air. From auger electron spectroscopy (AES) depth profiles, it was found that the oxidation of the protective platinum silicide overlayer significantly slowed down further migration of oxygen to the SiC interface. In addition, Pt and W played the role of mutual blocking, which guarantees the stability of the contact. This research suggests that the contacts are very promising for applications in harsh environments, where the simultaneously completed both on n-and p-type stability ohmic contacts is crucial.

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Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal

Cited by 16 publications

References 14 publications

Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

Extremely Thermal Stable Ni/W/TaSi<sub>2</sub>/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC

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