Design and experimental analysis of a 1 kW, 800 kHz all-SiC boost DC-DC converter

Zhong, Xiang; Wu, Xinke; Zhou, Weicheng; Cheng, Shidong; Sheng, Kuang

doi:10.1109/apec.2014.6803353

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…New technologies of power devices based on wide-bandgap materials, Silicon Carbide (SiC) and Gallium Nitride have significantly extended available spaces in a design process of power electronic converter design [1][2][3][4][5][6]. Lower on-state resistances and an ability to switch faster are key features of the new devices that definitely outperform Silicon transistors.…”

Section: Introductionmentioning

confidence: 99%

“…Authors decided to verify properties of SiC (Silicon Carbide) devices and interleaving technique commonly used in the industry application of boost converters. In the area of DC-DC converters, a possibility to increase switching frequency is an especially interesting option [3,5]. Short switching times of wide-bandgap elements lead to low switching energy losses and, therefore, frequency may be elevated in order to decrease size and weight of the passive elements-inductors and capacitors.…”

Section: Introductionmentioning

confidence: 99%

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Highly-Efficient and Compact 6 kW/4 × 125 kHz Interleaved DC-DC Boost Converter with SiC Devices and Low-Capacitive Inductors

2017

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This paper describes a four-leg interleaved DC-DC boost converter built on the basis of Silicon Carbide (SiC) devices (Metal-Oxide Semiconductor Field-Effect Transistors-MOSFETs and Schottky diodes) and improved, low-capacitive magnetic components. A combination of wide-bandgap semiconductors capable of operating at elevated switching frequencies and an interleaving technique brings substantial benefits, such as a cancellation of the input/output current ripples, a reduction of weight, dimensions and increase of power density. The 4 × 125 kHz DC-DC boost converter characterized by a volume of 0.75 dm 3 reaches an efficiency above 98.7% at nominal power of 6 kW. A special effort has been made to develop and test inductors with low parasitic capacitance. It is clearly proven that an improved design has an impact on the converter performance, especially on power losses. Reduction of the power losses is higher than 25% in reference to a standard design of the inductors and the efficiency is in excess of 99%.

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