Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study

Abstract

A: Low Gain Avalanche Detectors (LGAD) are silicon sensors with a time resolution better than 20 ps. The ATLAS and CMS experiments are designing LGAD detectors to address the pile-up challenge at the High Luminosity-Large Hadron Collider (HL-LHC). The Institute of High Energy Physics (IHEP) High-Granularity Timing Detector group has recently developed its first version of LGAD sensors. The LGAD structure was designed using Technology Computer-Aided Design (TCAD) simulations and optimized to obtain a high breakdown voltage and ideal gain. The n-type Junction Termination Extension (N-JTE) zone is a critical structure to guarantee a high breakdown voltage. The gain layer is optimized for an ideal gain factor and hence good time resolution. The optimized LGAD sensor has a gain higher than six and a breakdown voltage higher than 400 V. K: Solid state detectors; Timing detectors; Charge transport and multiplication in solid media; Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc) 1Corresponding author.

Study of Impact Ionization Coefficients in Silicon With Low Gain Avalanche Diodes

“…To maximize the performance of LGADs, the device parameters have to be very carefully tuned to achieve the anticipated gain under the defined operational conditions [1], [5]. This requires reliable and precise impact ionization models to predict the gain in the design phase of the devices.…”

A TCAD study on the effect of process parameters on silicon optical phase shifter performance

“…These constitutes the technology computer-aided design (TCAD) simulation of different electronic and optoelectronic devices. Multiple studies have been done using TCAD tools to optimize and design different devices and technologies [30]; [31]; [32]; [33].…”