Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

Donaton, R. A; Chidambarrao, D.; Johnson, J. B.; Chang, P.; Liu, Yaocheng; Henson, W.K.; Holt, J.; Xi, Li; Li, Jinghong; Domenicucci, A.; Madan, A.; Rim, K.; Wann, C.

doi:10.1109/iedm.2006.346813

Cited by 26 publications

(9 citation statements)

References 5 publications

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“…2 If the growth is performed on planar substrates, the islands form randomly. For their integration in novel device architectures such as dot based field effect transistors, [3][4][5] perfectly ordered SiGe island arrays are required to allow their external addressability. For this purpose new approaches were developed based on a combination of lithography and selforganized growth.…”

Section: G Bauermentioning

confidence: 99%

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

Zhang

Stoffel

Rastelli

et al. 2007

Applied Physics Letters

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The morphological evolution of both pits and SiGe islands on patterned Si͑001͒ substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.

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Section: G Bauermentioning

confidence: 99%

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

Zhang

Stoffel

Rastelli

et al. 2007

Applied Physics Letters

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“…This value is about a factor of three higher than the one which can be realized by capping relaxed SiGe epilayers with Si without introducing dislocations. Consequently, the reported x-ray diffraction investigations prove that the concept of realizing highly strained Si channels by exploiting the strain state in the Si capping layers on top of periodically aranged islands as suggested by Schmidt and Eberl [6] is superior to concepts based on buried relaxed SiGe epilayers [12].…”

Section: Discussionmentioning

confidence: 99%

X-ray diffraction study of the composition and strain fields in buried SiGe islands

Hrauda

Zhang

Stoffel

et al. 2009

Eur. Phys. J. Spec. Top.

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Abstract.We report on studies of strain and composition of two-dimensionally ordered SiGe islands grown by molecular beam epitaxy using high resolution x-ray diffraction. To ensure a small size distribution of the islands, pit-patterned 4 (001) Si wafers were used as substrates. The Si wafers were patterned by optical lithography and reactive ion etching. The pits for island growth are ordered in regular 2D arrays with periods ranging from 500 to 1000 nm along two orthogonal 110 directions. After the growth of a Si buffer layer, 5 to 9 monolayers of Ge are deposited, leading to the formation of islands with either dome-or barn shape, depending on the number of monolayers deposited. The Si capping of the islands is performed at low temperatures (300• C) to avoid intermixing and thus strain relaxation. Information on the surface morphology obtained by atomic force microscopy (AFM) was used to set up models for three-dimensional Finite Element Method (FEM) simulations of the islands including the patterned Si substrate. In the model, special attention was given to the non uniform distribution of the Ge content within the islands. The FEM results served as an input for calculating the diffracted x-ray intensities using kinematical scattering theory. Reciprocal space maps around the vicinity of symmetric (004) and asymmetric (113) and (224) Bragg peaks were recorded in coplanar geometry. Simulating different germanium gradients leads to altered scattered intensity distribution and consequently information on this quantity is obtained for both dome-and barn-shaped islands as well as on the strain fields.

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“…Grazing incidence (α i =0.12°) and emergence angles (α f =0.24°) close to the critical angles of total reflection allow measuring the diffraction of the (220) and (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes perpendicular to the surface (see inset of Figure 3a) of the top SOI layer. Larger grazing angles (α i =0.3°, α f =0.6°) are used to go through the amorphous nitride layer, in the substrate.…”

Section: Gixrd Characterizationmentioning

confidence: 99%

Simulation and Characterization of the Strain Induced by an Original "Embedded Buried Nitride" Technique

et al. 2009

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An original technique is used to induce a compressive strain in the channel of Fully Depleted (FD)SOI MOSFETs thanks to an embedded buried nitride stressor. Strain measurements are performed by Grazing Incidence X-ray Diffraction (GIXRD) and compared to mechanical simulations. Both results are in agreement and prove that the strain level can achieve -0.6 % (-780 MPa) in the channel of a transistor, depending on the active region geometry and the nitride properties (intrinsic strain and thickness). This technique is thus very promising in order to boost pMOSFETs on thin films.

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Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

Cited by 26 publications

References 5 publications

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

X-ray diffraction study of the composition and strain fields in buried SiGe islands

Simulation and Characterization of the Strain Induced by an Original "Embedded Buried Nitride" Technique

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