Design and fabrication of physical vapor transport system for the growth of SiC crystals

Dhanaraj, Govindhan; Dudley, Michael; Ma, Ronghui; Zhang, H.; Prasad, V.

doi:10.1063/1.1775312

Cited by 7 publications

(5 citation statements)

References 13 publications

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“…The compacted SiC charge has to fit into the crucible, the diameter of the charge cylinder is therefore smaller than the crucible. However, the gap between the charge and inner crucible wall is usually very small ($1 mm) so the initial gap is neglected in thermal analysis due to strong radiation [21].…”

Section: Heat Transfer In Porous Mediamentioning

confidence: 99%

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Increase of SiC sublimation growth rate by optimizing of powder packaging

Wang

Cai

Zhang

2007

Journal of Crystal Growth

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Section: Heat Transfer In Porous Mediamentioning

confidence: 99%

“…Furthermore, the effect of a central hole in the powder on the sublimation rate is studied and result is compared to the case of the packed powder without a hole Fig. 1 shows a SiC sublimation growth system being studied in this paper [21]. The considered system is axisymmetric.…”

Section: Introductionmentioning

confidence: 99%

Increase of SiC sublimation growth rate by optimizing of powder packaging

Wang

Cai

Zhang

2007

Journal of Crystal Growth

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“…The 6H SiC bulk crystals and epitaxial films were grown in PVT [6] and CVD [7] systems developed in our laboratory. The hot-zones were fabricated with the knowledge of the temperature distribution obtained from numerical modeling.…”

Section: Growth Of Bulk and Epitaxial Sicmentioning

confidence: 99%

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Dhanaraj

Chen

Dudley

et al. 2006

MSF

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Bulk crystals and epitaxial layers of 6H SiC have been grown and their surface morphologies have been investigated. Seeded sublimation has been employed to obtain bulk 6H SiC crystals whereas a silicon tetrachloride-propane based chemical vapor deposition (CVD) was used for growing epitaxial layers. The hot-zones were designed using numerical simulation. Growth rates up to 200 μm/hr could be achieved in the CVD process. A new growth-assisted hydrogen etching was developed to reveal the distribution of the micropipes present in the substrate. Morphological features were studied using Nomarski, atomic force microscopy (AFM), and scanning electron microscopy (SEM), and the structural quality was evaluated using synchrotron X-ray topography.

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“…3C–SiC, 2H–SiC, 4H–SiC, and 6H–SiC are the most common phases. SiC can be synthesized by chemical vapor deposition (CVD) [14, 15, 16, 17, 18], vapor liquid solid (VLS) [19, 20, 21, 22, 23] and physical vapor transport (PVT) [24, 25, 26, 27, 28] methods. Silicon carbide has been used in photovoltaic solar cells (PVSC) [29, 30, 31, 32, 33, 34, 35] for decades.…”

Section: Introductionmentioning

confidence: 99%

Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations

Alkhaldi

Barman

Huda

2019

Heliyon

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Silicon carbide has been used in a variety of applications including solar cells due to its high stability. The high bandgap of pristine SiC, necessitates nonstoichiometric silicon carbide materials to be considered to tune the band gap for efficient solar light absorptions. In this regards, thermodynamically stable Si-rich SixC1-x materials can be used in solar cell applications without requiring the expensive pure grade silicon or pure grade silicon carbide. In this work, we have used density functional theory (DFT) to examine the stability of various polymorphs of silicon carbide such as 2H–SiC, 4H–SiC, 6H–SiC, 8H–SiC, 10H–SiC, wurtzite, naquite, and diamond structures to produce stable structures of Si-rich SixC1-x. We have systematically replaced the carbon atoms by silicon to lower the band gap and found that the configurations of these excess silicon atoms play a significant role in the stability of Si-rich SixC1-x. Hence, we have investigated different configurations of silicon and carbon atoms in these silicon carbide structures to obtain suitable SixC1-x materials with tailored band gaps. The results indicate that 6H-SixC1-x is thermodynamically the most favorable structure within the scope of this study. In addition, Si substitution for C sites in 6H–SiC enhances the solar absorption, as well as shifts the absorption spectra toward the lower photon energy region. In addition, in the visible range the absorption coefficients are much higher than the pristine SiC.

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Design and fabrication of physical vapor transport system for the growth of SiC crystals

Cited by 7 publications

References 13 publications

Increase of SiC sublimation growth rate by optimizing of powder packaging

Increase of SiC sublimation growth rate by optimizing of powder packaging

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations

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