Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension

Lee, Hyun-Soo; Zhang, Yuxuan; Chen, Zhaoying; Rahman, Mohammad Wahidur; Zhao, Hongping; Rajan, Siddharth

doi:10.1109/ted.2020.3007133

Cited by 23 publications

(11 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Step mesa ET has been reported to increase the device BV of GaN power devices [35]. For the ET with step mesa, the width (W), depth (D), and the number of steps define the mesa structure [Fig 2(b)].…”

Section: Design Models and Calibrationmentioning

confidence: 99%

“…ET is critical for high voltage power devices because it can alleviate the electric field crowding effect at the device edge and prevent the devices from premature breakdown [30]. Different ET techniques have been successfully incorporated in GaN and SiC p-n power diodes such as mesa [31][32][33][34][35][36][37][38][39][40][41], ion implantation [31,32,42,43], guard rings [32,40,41,[44][45][46], plasma-based ET [31,47,48], and field plates [31,32,49].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Mudiyanselage

Wang

2022

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

Breakdown capability of β-Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With 5 μm β-Ga2O3 drift layer, the ideal breakdown voltage (BV) of the heterojunction was 1.37 kV, while the BV of the reference device without effective mesa edge termination decreased dramatically to 300 V due to the electric field crowding at the device edge. Four mesa ET structures were investigated to mitigate the electric field crowding at the junction edge, including beveled mesa, step mesa, deeply etched mesa, and p-doped guard ring. Without effective ET, the peak electric field at the junction edge was ~ 4.2 MV/cm at −300 V. By incorporating these ET techniques, the peak electric fields were reduced significantly to 0.73 MV/cm. Ideal BV of 1.37 kV was achievable using deeply etched mesa and guard ring ETs. The beveled mesa realized >80% of the ideal BV, while step mesa ET was less effective in alleviating the electric field crowding and only offered ~ 40% of the ideal BV. The device BV can be further scaled by varying β-Ga2O3 drift layer thickness. This work can serve as an important reference and guideline for developing high power high voltage β-Ga2O3 based bipolar power devices.

show abstract

Section: Design Models and Calibrationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Mudiyanselage

Wang

2022

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

show abstract

“…Although tremendous progresses have been made in the past few years, [ 6–11 ] challenges still exist to achieve vertical GaN power devices with V BR > 10 kV. One of the key issues is associated with the epitaxy of high‐quality GaN films with thick drift layer, low controllable doping, and high mobility.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Zhang

Chen

et al. 2021

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high‐power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h−1 is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH4 flow, an electron concentration as low as 4 × 1015 cm−3 in n−‐GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h−1. Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 × 1016 cm−3. GaN growth on Mn‐doped semi‐insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm2 V−1 s−1 as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.

show abstract

“…V ertical gallium nitride (GaN) power devices are highly efficient for power conversion systems. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] However, they rely on complicated etching and regrowth processes. Thus, a simple planar process based on ion implantation as used in silicon and silicon carbide devices is desired for device fabrication.…”

mentioning

confidence: 99%

Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping

Nishimura¹,

Ikeda²,

Kachi³

2021

Appl. Phys. Express

View full text Add to dashboard Cite

Ion implantation into p-type gallium nitride (GaN) to a depth of several microns for power devices is a challenge because their activation is disturbed by the damage caused by implantation. To reduce this damage, a channeled implantation technique was applied to implant magnesium (Mg) ions into GaN (0001). Compared with random implantation, channeled implantation was demonstrated to implant and activate ions in >10 times deeper regions. Thus, the channeled implantation technique is indispensable for the deep implantation of Mg ions into GaN devices.

show abstract

Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension

Cited by 23 publications

References 30 publications

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping

Contact Info

Product

Resources

About