2019
DOI: 10.1142/s0218126619500828
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Design and Implementation of New Topology for Nonisolated DC–DC Microconverter with Effective Clamping Circuit

Abstract: This paper presents nonisolated DC–DC converter which suits for solar photovoltaic (PV) applications. The DC–DC converter proposed in this paper utilizes coupled inductor, voltage boost capacitor and passive clamp circuit to achieve desired voltage gain and the passive clamp circuit will help the converter to accomplish high efficiency. To minimize the voltage spike/ringing across MOSFET drain-source and to recover the coupled inductor leakage energy, the RCD clamp circuit is used. The voltage lift capacitor a… Show more

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Cited by 16 publications
(10 citation statements)
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“…The remaining 10 V is clamped using the RCD clamp circuit, and the voltage stress across the clamp diode (V Dc ) is shown in Figure 12c. The maximum current stress of the MOSFET switch at a 0.5 duty cycle is calculated using Equation (29), and is equal to 4 A. The same can be noticed from Figure 12b.…”
Section: Simulation Resultssupporting
confidence: 53%
See 1 more Smart Citation
“…The remaining 10 V is clamped using the RCD clamp circuit, and the voltage stress across the clamp diode (V Dc ) is shown in Figure 12c. The maximum current stress of the MOSFET switch at a 0.5 duty cycle is calculated using Equation (29), and is equal to 4 A. The same can be noticed from Figure 12b.…”
Section: Simulation Resultssupporting
confidence: 53%
“…However, due to the many components, the power losses are higher than with other converters [27,28]. The authors of [29] proposed a converter with different types of clamp circuit to reduce the voltage spikes of the MOSFET switch. However, the converter efficiency is low under full-load conditions due to its passive clamp structure.…”
Section: Introductionmentioning
confidence: 99%
“…The PV panel specification is given as follows; V mp = 40 V, I mp = 5 A, V oc = 47.8 V, I sc = 6.2 A, P mp = 200 W, and number of PV cells = 72. The commonly used dc-dc boost converter is designed as per [48], and design parameters of the converter are as follows: f s = 100 kHz, V in = (24-150 V), V out = 388 V, L dc = 1.7 mH, C out = 100 μF, 450 V (electrolytic), and ripple voltage is assumed as less than 1%. The load resistance is selected as 22 .…”
Section: Resultsmentioning
confidence: 99%
“…The most common topologies used in such applications are conventional boost [6], interleaved boost [7], quadratic boost [8], zsource boost [9,10], voltage-multiplier cells [11][12][13][14][15][16][17][18][19], cascade topologies [20] and boost-flyback converters [21,22].…”
Section: Introductionmentioning
confidence: 99%