Design and modeling of InAs/GaSb type II superlattice based dual-band infrared detectors

Ariyawansa, G.; Grupen, Matt; Duran, Joshua M.; Scheihing, John E.; Nelson, Thomas R.; Eismann, Michael T.

doi:10.1063/1.3702581

Cited by 24 publications

(16 citation statements)

References 52 publications

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“…As indicated in Figures 4 and 6, the effective bandgap is determined by the difference between the bottom of the lowest electron miniband (C1) and the top of the highest hole miniband (HH1) and it has the value of 0.13 eV, which is in excellent agreement with the one experimentally reported by [48] and theoretically with the absorption spectrum reported in Figure 8. This effective gap can be tuned by changing the layer thickness and is primarily determined by the position of the C1 bottom edge since the HH1 band width is less sensitive to layer thickness [49]. The HH1 band width is too small which might be interpreted as it experiences a balanced effect between higher and lower bands.…”

Section: Parabolicmentioning

confidence: 99%

Modeling Energy Bands in Type II Superlattices

Bennecer

Sengouga

2019

Crystals

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We present a rigorous model for the overall band structure calculation using the perturbative k · p approach for arbitrary layered cubic zincblende semiconductor nanostructures. This approach, first pioneered by Kohn and Luttinger, is faster than atomistic ab initio approaches and provides sufficiently accurate information for optoelectronic processes near high symmetry points in semiconductor crystals. k · p Hamiltonians are discretized and diagonalized using a finite element method (FEM) with smoothed mesh near interface edges and different high order Lagrange/Hermite basis functions, hence enabling accurate determination of bound states and related quantities with a small number of elements. Such properties make the model more efficient than other numerical models that are usually used. Moreover, an energy-dependent effective mass non-parabolic model suitable for large gap materials is also included, which offers fast and reasonably accurate results without the need to solve the full multi-band Hamiltonian. Finally, the tools are validated on three semiconductor nanostructures: (1) the bound energies of a finite quantum well using the energy-dependent effective mass non-parabolic model; (2) the InAs bulk band structure; and (3) the electronic band structure for the absorber region of photodetectors based on a type-II InAs/GaSb superlattice at room temperature. The tools are shown to work on simple and sophisticated designs and the results show very good agreement with recently published experimental works.

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Section: Parabolicmentioning

confidence: 99%

Modeling Energy Bands in Type II Superlattices

Bennecer

Sengouga

2019

Crystals

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“…The working mechanism is similar to that of the dualband detector which was mentioned in Ref. [14]. The optical characterization of the front-side illuminated detector was performed at 77 K using a Fourier transform infrared (FTIR) spectrometer (Bruker Vertex70) and a calibrated black-body (SYSTEMS) source at a temperature of 500 • C. The FTIR spectrometer was calibrated by using a standard DTGS detector without anti-reflection (AR) coating.…”

Section: Spectral Responsementioning

confidence: 99%

High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector

et al. 2019

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A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-II InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 µm under 20 mV and 57% at 9.1 µm under −60 mV, respectively. The optical performance for each channel was achieved using a 2 µm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached 5.0×10 11 cm•Hz 1/2 /W at 6.8 µm and 3.1×10 11 cm•Hz 1/2 /W at 9.1 µm, respectively, at 77 K.

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“…Dual-band infrared (IR) focal plane array (FPA) detectors capable of imaging simultaneously in two wavebands have matured dramatically in the last decade [1]- [5]. Because the thermal signatures of objects and backgrounds are wavelength dependent, this technology can in theory be used to improve target detection, tracking, and clutter rejection performance in a variety of important applications [6]- [8].…”

Section: Introductionmentioning

confidence: 99%

Robust dual-band MWIR/LWIR infrared target tracking

Nguyen

Havlicek

Fan

et al. 2014

2014 48th Asilomar Conference on Signals, Systems and Computers

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We introduce an SIR particle filter for tracking civilian targets including vehicles and pedestrians in dual-band midwave/longwave infrared imagery as well as a novel dualband track consistency check for triggering appearance model updates. Because of the paucity of available dual-band data, we constructed a custom sensor to acquire the test sequences. The proposed algorithm is robust against magnification changes, aspect changes, and clutter and successfully tracked all 17 cases tested, including two partial occlusions. Future work is needed to comprehensively evaluate performance of the algorithm against state-of-the-art video trackers, especially considering the relatively small number of previous dual-band tracking results that have appeared.

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Design and modeling of InAs/GaSb type II superlattice based dual-band infrared detectors

Cited by 24 publications

References 52 publications

Modeling Energy Bands in Type II Superlattices

Modeling Energy Bands in Type II Superlattices

High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector

Robust dual-band MWIR/LWIR infrared target tracking

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