Design and Operation of an Optically-Accessible Modular Reactor for Diagnostics of Thermal Thin Film Deposition Processes

Kimes, William A.; Sperling, Brent A.; Maslars, J. E.

doi:10.6028/jres.120.005

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…ALD is performed in a custombuilt viscous flow reactor described in the literature. 51 The substrates, which are 50-mm-diameter Si wafers sputter-coated with 250 nm of Al, are initially cleaned with O 3 generated in air to remove adventitious carbon. After cleaning, they are placed on the central pedestal of the reactor while it is vented.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

2020

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Atomic layer deposition (ALD) of Al 2 O 3 using trimethylaluminum and H 2 O is known to proceed through sequential surface reactions that leave the surface alternately terminated with AlCH 3 and OH groups. Using in situ reflection− absorption infrared spectroscopy in a flow reactor, we monitor the consumption of AlCH 3 groups by brief pulses of H 2 O at temperatures between 105 and 300 °C. At low temperatures, the surface reactions occur by what appears to be two stages that can be fit to a biexponential decay. Rate laws based on species of AlCH 3 groups that also predict a biexponential decay are found to depend on unrealistic activation energies for their constituent reactions when applied to the data. However, a model in which the effective activation energy changes linearly with AlCH 3 coverage does adequately fit the data. This model produces the apparent biexponential decay at low temperatures, and it confirms prior suggestions of a coverage dependence in the rate constant. The decrease in the effective activation energy with increasing coverage can be interpreted in terms of a cooperative effect between adjacent AlCH 3 groups. These findings may provide a framework for further studies, and both the kinetic model and parametric fits to the data may be useful in the construction of models of this important ALD process.

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Section: ■ Experimental Sectionmentioning

confidence: 99%

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

2020

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In situ infrared spectroscopy during La2O3 atomic layer deposition using La(iPrCp)3 and H2O

Sperling

Maslar

Ivanov

2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Infrared spectra of surface species have been obtained during atomic layer deposition using tris(isopropylcyclopentadienyl)lanthanum, La(i PrCp) 3 , and water as precursors at 160 °C and 350 °C. Gas-phase spectra of La(i PrCp) 3 are obtained for comparison. At low temperature, ligand exchange is seen to occur, and carbonate formation is found. With extended purging, the organic ligands are found to be stable on the surface, and carbonates are not formed. These observations indicate that carbonate formation is occurring during exposure to the precursors. At high temperature, the La precursor is observed to decompose leaving an opaque deposit containing relatively little hydrogen.

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MoS2 thin films from a (NtBu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process

Kalanyan

Beams

Katz

et al. 2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend themselves to the scalable and controllable formation of TMD films on surfaces are desirable for high volume manufacturing of devices based on these materials. The authors have developed a new thermal atomic layer deposition process using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol to produce MoS2-containing amorphous films. They observe a self-limiting reaction behavior with respect to both the Mo and S precursors at a substrate temperature of 350 °C. Film thickness scales linearly with precursor cycling, with growth per cycle values of ≈0.1 nm/cycle. As-deposited films are smooth and contain nitrogen and carbon impurities attributed to poor ligand elimination from the Mo source. Upon high-temperature annealing, a large portion of the impurities are removed, and the authors obtain few-layer crystalline 2H-MoS2 films.

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Design and Operation of an Optically-Accessible Modular Reactor for Diagnostics of Thermal Thin Film Deposition Processes

Cited by 3 publications

References 8 publications

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

In situ infrared spectroscopy during La2O3 atomic layer deposition using La(iPrCp)3 and H2O

MoS2 thin films from a (NtBu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process

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Design and Operation of an Optically-Accessible Modular Reactor for Diagnostics of Thermal Thin Film Deposition Processes

Cited by 3 publications

References 8 publications

Atomic Layer Deposition of Al2O3Using Trimethylaluminum and H2O: The Kinetics of the H2O Half-Cycle

Atomic Layer Deposition of Al2O3Using Trimethylaluminum and H2O: The Kinetics of the H2O Half-Cycle

In situ infrared spectroscopy during La2O3 atomic layer deposition using La(iPrCp)3 and H2O

MoS2 thin films from a (NtBu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process

Contact Info

Product

Resources

About

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle