Design and optimization of a CMOS-MEMS integrated current mirror sensing based MOSFET embedded pressure sensor

Rathore, Pradeep; Panwar, B.S.

doi:10.1109/cca.2013.6662789

Cited by 11 publications

(3 citation statements)

References 14 publications

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“…Digital Object Identifier: 10.1109/LSEN.XXXX.XXXXXXX (inserted by IEEE). [11]; the fabrication and modelling of a pressure sensitive FET [12]; the use of a polyimide sacrificial layer and suspension gate MOSFET [13]; a nc-Si/c-Si heterojunction MOSFET pressure sensor [14] showing a sensitivity of 2.15 mV/kPa and the design of a mirror sensing based MOSFET embedded pressure sensor [15]. Finally, [16] uses the piezo-MOS effect within a pressure sensitive differential amplifier.…”

Section:  Introductionmentioning

confidence: 99%

Thin-Film MOSFET-Based Pressure Sensor

et al. 2019

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Section:  Introductionmentioning

confidence: 99%

Thin-Film MOSFET-Based Pressure Sensor

et al. 2019

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“…This can help to compensate for the environmental impacts such as temperature . Besides the general setup in a Wheatstone bridge, MOSFETs can be arranged together with resistors or as active component in various circuitry, like current mirrors …”

Section: Introductionmentioning

confidence: 99%

Characterisation of MOS Transistors as an Electromechanical Transducer for Stress

Hafez¹,

Haas

Loebel³

et al. 2018

Physica Status Solidi (a)

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The influence of mechanical stress on field effect transistors is investigated using a pressure-deflected membrane for generation various mechanical stresses. It consists of a silicon membrane and transistors, which are designed and manufactured using 1.0 μm-XC10 technology from X-Fab. The transducers for sensing mechanical stress are placed on the edges with the maximum stress. Furthermore, the position is optimized by using FEM simulations (Ansys). Different variances of transistors and the impact on their electrical properties are investigated. Transistors are manufactured with different parameters such as channel lengths, widths, and alignments of the channel current to the direction of the mechanical stress, as well as connecting transistors in Wheatstone-like quarter and half bridges to generate a read-out voltage that is amplified using an integrated operational amplifier on the same chip. The bridge consists of p-MOSFETs as transducers on the membrane and n-MOSFETs as reference transistors (active loads). Transistors bridges are optimized on sensitivity, linearity and temperature behavior by varying channel length (L) and width (W). The influence of the membrane size and deposited technology layers is also investigated. The focus of this publication is presenting an analysis of the electrical behavior of the designed and manufactured transistors for different applied pressures. An experimental setup with a temperature and pressure calibrators is used for characterizing the transducers between 25 and 75 C and up to 1 bar differential pressure.

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“…In our previous works (Rathore and Panwar, 2013a, 2013b, 2013cRathore et al, 2013;Rathore and Panwar, 2014), we have discussed a MOSFET-embedded pressure sensorintegrated with a current mirror readout circuitry. The sensitivities of the MOSFET-embedded pressure sensor and its modified structure were found to be approximately 10 and 473 mV/MPa, respectively.…”

Section: Introductionmentioning

confidence: 99%

A novel CMOS-MEMS integrated pressure sensing structure based on current mirror sensing technique

Rathore

Panwar

Akhtar

2015

Microelectronics International

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Purpose -The present paper aims to propose a basic current mirror-sensing circuit as an alternative to the traditional Wheatstone bridge circuit for the design and development of high-sensitivity complementary metal oxide semiconductor (CMOS)-microelectromechanical systems (MEMS)-integrated pressure sensors. Design/methodology/approach -This paper investigates a novel current mirror-sensing-based CMOS-MEMS-integrated pressure-sensing structure based on the piezoresistive effect in metal oxide field effect transistor (MOSFET). A resistive loaded n-channel MOSFET-based current mirror pressure-sensing circuitry has been designed using 5-m CMOS technology. The pressure-sensing structure consists of three identical 10-m-long and 50-m-wide n-channel MOSFETs connected in current mirror configuration, with its input transistor as a reference MOSFET and output transistors are the pressure-sensing MOSFETs embedded at the centre and near the fixed edge of a silicon diaphragm measuring 100 ϫ 100 ϫ 2.5 m. This arrangement of MOSFETs enables the sensor to sense tensile and compressive stresses, developed in the diaphragm under externally applied pressure, with respect to the input reference transistor of the mirror circuit. An analytical model describing the complete behaviour of the integrated pressure sensor has been described. The simulation results of the pressure sensor show high pressure sensitivity and a good agreement with the theoretical model has been observed. A five mask level process flow for the fabrication of the current mirror-sensing-based pressure sensor has also been described. An n-channel MOSFET with aluminium gate was fabricated to verify the fabrication process and obtain its electrical characteristics using process and device simulation software. In addition, an aluminium gate metal-oxide semiconductor (MOS) capacitor was fabricated on a two-inch p-type silicon wafer and its CV characteristic curve was also measured experimentally. Finally, the paper presents a comparative study between the current mirror pressure-sensing circuit with the traditional Wheatstone bridge. Findings -The simulated sensitivities of the pressure-sensing MOSFETs of the current mirror-integrated pressure sensor have been found to be approximately 375 and 410 mV/MPa with respect to the reference transistor, and approximately 785 mV/MPa with respect to each other. The highest pressure sensitivities of a quarter, half and full Wheatstone bridge circuits were found to be approximately 183, 366 and 738 mV/MPa, respectively. These results clearly show that the current mirror pressure-sensing circuit is comparable and better than the traditional Wheatstone bridge circuits. Originality/value -The concept of using a basic current mirror circuit for sensing tensile and compressive stresses developed in micro-mechanical structures is new, fully compatible to standard CMOS processes and has a promising application in the development of miniaturized integrated micro-sensors and sensor arrays for automobile, medical and industrial application...

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Design and optimization of a CMOS-MEMS integrated current mirror sensing based MOSFET embedded pressure sensor

Cited by 11 publications

References 14 publications

Thin-Film MOSFET-Based Pressure Sensor

Thin-Film MOSFET-Based Pressure Sensor

Characterisation of MOS Transistors as an Electromechanical Transducer for Stress

A novel CMOS-MEMS integrated pressure sensing structure based on current mirror sensing technique

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