Design and optimization of high-performance 1.3-μm VCSELs

Abstract

This paper discusses the design and the internal device physics of novel high-performance vertical-cavity surfaceemitting lasers (VCSELs) emitting at 1.32 µm wavelength. Our VCSEL design features intra-cavity ring contacts, strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction. The tunnel junction is laterally confined forming an aperture for current injection and wave guiding. Undoped AlGaAs/GaAs mirrors are bonded on both sides to the InP-based active region. These devices have recently demonstrated continuous-wave (CW) lasing at stage temperatures up to 134 O C, the highest temperature reported thus far for any long-wavelength VCSEL. In order to increase the single mode output power at high temperatures, we simulate, analyze, and optimize our VCSEL using advanced numerical software tools. The two-dimensional model self-consistently combines electrical, optical, thermal and gain calculations. It gives good agreement with measurements after careful calibration of material parameters. Design optimization promises single mode output power of 2mW in CW operation at 80 O C ambient temperature.

Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers

“…Nine curves are shown, representing active region temperatures from 0 C to 160 C. The gain along the curves is fixed at 550 cm , which is the estimated threshold gain of these VCSELs (the slight increase in threshold gain at higher temperatures caused by increased internal loss was determined to not impact the results of these calculations, and is, therefore, neglected in this model). Further details about the device design are reported elsewhere [7], [12]. At low temperatures, the differential gain decreases drastically for wavelengths longer than the gain peak.…”

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

“…Fundamental changes in improvement of VCSEL cause increasing power and speed and decreasing dependence on temperature [14]. Present work has improved the structure of a VCSEL which was fabricated [15].…”

Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

“…Stronger electron confinement and improved high temperature performance has been obtained using this system [3]. Improvement in characteristics have been obtained by using AlGaInAs /InP active region which produce a larger conduction band offset than InGaAsP/InP active region [4]. AlGaInAs/ InP QWs, have better temperature performance than GaInAsP QWs [1].…”