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We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm 2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

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