Uniform threshold current, continuous-wave, singlemode1300 nm vertical cavity lasers from 0 to 70°C

Jayaraman, V.; Geske, J.; MacDougal, M.H.; Peters, Frank; Lowes, T.D.; Char, T.T.

doi:10.1049/el:19980997

Cited by 72 publications

(14 citation statements)

References 4 publications

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“…VCSOAs operating at a 1.3-m wavelength are desirable fiber optic components. Commercial 1.3-m vertical-cavity surface-emitting lasers (VCSELs) are already in production [5]. Those optically pumped VCSELs use GaAs/InP wafer fusion to combine InP-based gain regions with highly reflective AlGaAs/GaAs mirrors.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of vertical-cavity semiconductor optical amplifiers

Piprek

Bjorlin

Bowers

2001

IEEE J. Quantum Electron.

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Abstract-The authors present detailed, yet largely analytical, models for gain, optical bandwidth, and saturation power of vertical-cavity semiconductor optical amplifiers (VCSOAs) in reflection and transmission mode. Simple formulas for the gain-bandwidth product are derived. The saturation model considers a sublinear material gain, gain enhancement by the standing-wave effect, and all relevant carrier recombination mechanisms. Excellent agreement with measurements on novel 1.3-m VCSOAs is obtained. The models are used to analyze device performance and to investigate optimization options. Parameter plots are given which allow for an easy exploration of the VCSOA design space, matching desired performance data with the required mirror reflectivity and pump current.

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Section: Introductionmentioning

confidence: 99%

Design and analysis of vertical-cavity semiconductor optical amplifiers

Piprek

Bjorlin

Bowers

2001

IEEE J. Quantum Electron.

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“…The array is optically pumped with a 980-nm pump laser, a technique that has been commercially implemented in a wafer-scale process [10]. The periodic-gain active regions utilize about 680 nm of 1.35-m InGaAsP barrier material and have a single-pass absorption of about 80%.…”

Section: Resultsmentioning

confidence: 99%

Long-wavelength two-dimensional WDM vertical cavity surface-emitting laser arrays fabricated by nonplanar wafer bonding

Geske

Okuno

Leonard

et al. 2003

IEEE Photon. Technol. Lett.

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Abstract-We demonstrate the first long-wavelength two-dimensional wavelength-division-multiplexed vertical cavity surface-emitting laser array. The eight-channel single-mode array covers the -band from 1532 to 1565 nm. The devices are fabricated using two separate active regions laterally integrated using nonplanar wafer bonding. We achieved single-mode powers up to 0.8 mW, 2-dB output power uniformity across the array, and sidemode suppression ratios in excess of 43 dB. This fabrication technique can be used to maintain the gain-peak and cavity-mode alignment across wide-band arrays and, with the use of nontraditional mirrors, can be extended to the fabrication of arrays covering the entire -, -, and -bands as well as the 1310-nm transmission band.

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“…We have recently demonstrated the first vertical-cavity amplifiers operating at 1.3 µm wavelength [4], which are desirable for fiber optic applications. Commercial 1.3 µm vertical-cavity lasers (VCLs) are already in production [5]. Those optically pumped VCLs use GaAs / InP wafer fusion to combine InP based gain regions with highly reflective AlGaAs / GaAs mirrors.…”

Section: Introductionmentioning

confidence: 99%

Modeling and optimization of vertical-cavity semiconductor laser amplifiers

2001

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We present detailed yet largely analytical models for gain, optical bandwidth, and saturation power of vertical-cavity laser amplifiers (VCLAs) in reflection and transmission mode. VCLAs are potential low-cost alternatives to in-plane laser amplifiers and they have the inherent advantage of polarization insensitivity, high fiber coupling efficiency, and low noise figure. Simple formulas for the optical gain-bandwidth product are derived which are valid for any type of Fabry-Perot amplifier. Our saturation model is based on rate equations for electrons and holes. It considers a sub-linear material gain, gain enhancement by the standing wave effect, Auger recombination, defect recombination, and spontaneous emission. Common linear approximations are avoided to correctly predict performance limits. Excellent agreement with measurements on novel 1.3-micron VCLAs is obtained. The models are used to analyze device performance and to investigate optimization options. With reduced top mirror reflectivity and increased pump efficiency, substantial and simultaneous improvements of optical bandwidth and saturation power are predicted without sacrificing gain. Parameter plots are given which allow for an easy exploration of the VCLA design space, matching desired performance goals with the required mirror reflectivity and pump current.

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Uniform threshold current, continuous-wave, singlemode1300 nm vertical cavity lasers from 0 to 70°C

Cited by 72 publications

References 4 publications

Design and analysis of vertical-cavity semiconductor optical amplifiers

Design and analysis of vertical-cavity semiconductor optical amplifiers

Long-wavelength two-dimensional WDM vertical cavity surface-emitting laser arrays fabricated by nonplanar wafer bonding

Modeling and optimization of vertical-cavity semiconductor laser amplifiers

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