Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes

Gökkavas, Mutlu; Onat, Bora M.; Özbay, Ekmel; Ata, E.P.; Xu, Jialing; Towe, E.; Ünlü, M. Selim

doi:10.1109/3.740742

Cited by 19 publications

(12 citation statements)

References 25 publications

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“…[1][2][3][4] The spectral response of III-V semiconductor photodiodes has also been tuned by incorporating the active material into a microcavity. 5,6 Potential applications of these resonant cavity enhanced photodiodes are in the field of sensors and telecommunications. Organic semiconductors bear a large potential for applications in photodetectors 7 and solar cells.…”

mentioning

confidence: 99%

One- and two-photon photocurrents from tunable organic microcavity photodiodes

Koeppe

Müller

Lupton

et al. 2003

Applied Physics Letters

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We have constructed multilayer thin-film organic microcavity photodiodes with the photoactive layer comprised of a spin-coated conjugated polymer and an evaporated C60 layer. The electrodes are designed as semitransparent mirrors which form a resonant cavity structure. The photocurrent spectra show distinct maxima at the optical resonances of the cavities, which are located up to 200 nm below the fundamental optical transition of the polymer. The design allows a simple tuning of the spectral response by varying the layer thickness. Microcavity photodiodes are also shown to be highly sensitive two-photon detectors, which exhibit a factor 500 improvement in the two-photon response compared to devices without photonic confinement.

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mentioning

confidence: 99%

One- and two-photon photocurrents from tunable organic microcavity photodiodes

Koeppe

Müller

Lupton

et al. 2003

Applied Physics Letters

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“…RCE photodetector research has mainly concentrated on using p-i-n type photodiodes (PD's) [3,4], whereas there have been only a few reports on RCE Schottky PD's [5,6,7]. In top-illuminated RCE Schottky PD's, a Schottky contact can also function as the top reflector of the resonant cavity.…”

Section: Introductionmentioning

confidence: 99%

“…The enhancement of the optical field in a FabryPerot resonator allows the use of thin absorbing layers, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. RCE devices benefit from the wavelength selectivity and the large increase of the resonant optical field introduced by the cavity [2].RCE photodetector research has mainly concentrated on using p-i-n type photodiodes (PD's) [3,4], whereas there have been only a few reports on RCE Schottky PD's [5,6,7]. In top-illuminated RCE Schottky PD's, a Schottky contact can also function as the top reflector of the resonant cavity.…”

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confidence: 99%

Silicon resonant cavity enhanced photodetectors at 1.55 μm

et al. 2005

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Silicon optical receivers, operating at the optical communication wavelengths in the 1.3-1.55 µm range, have attracted much research effort. Unfortunately, the performance of the devices proposed in literature are poor because this wavelength range is beyond the absorption edge of silicon. In order to extend the maximum detectable wavelength, the most common approach, in the realization of Si-based detectors, is the use of silicon-germanium layers on silicon, anyway, requiring processes non compatible with standard CMOS technology. In this paper, with the aim to extend the operation of silicon-based photo-detectors up to the 1.3-1.55 µm range, an alternative approach is investigated: we propose the design of a resonant cavity enhanced Schottky photodetector based on the internal photoemission effect. The device fabrication is completely compatible with standard silicon technology. 1.IntroductionHigh performance photodetectors operating at the wavelength of 1.55 micron are required for ultrafast photodetection in optical communication, measurement and sampling systems. The photodetector performance is measured by the bandwidth-efficiency product. For conventional vertically illuminated photodetectors, quantum efficiency and bandwidth have inverse dependencies on the photoabsorption layer thickness. This limit is overcome by edge-coupled and waveguides configurations. The disadvantages of these classes of devices are a more complex fabrication and integration, along with more difficult light coupling [1].Resonant-cavity-enhanced (RCE) photodetectors offer the best performance in order to overcome the limitation of conventional photodetectors. The enhancement in in RCE photodetectors, defined as the probability that a single photon incident on the device generates an electron hole pair which contributes to the detector current, is obtained by placing the active strucuture inside a Fabry-Perot resonat microcavity. The enhancement of the optical field in a FabryPerot resonator allows the use of thin absorbing layers, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. RCE devices benefit from the wavelength selectivity and the large increase of the resonant optical field introduced by the cavity [2].RCE photodetector research has mainly concentrated on using p-i-n type photodiodes (PD's) [3,4], whereas there have been only a few reports on RCE Schottky PD's [5,6,7]. In top-illuminated RCE Schottky PD's, a Schottky contact can also function as the top reflector of the resonant cavity. Optical losses in the metal contact limit the quantum efficiency. Effort to increase the device responsivity has been pursued by utilizing semi-transparent Sckottky contacts. The RCE detection scheme is particularly attractive for Schottky type photodetector, since it allows the fabrication of high performance photoreceivers by means of the relatively simple structures and fabrication processes.Traditionally, the operation of conventional and RCE photodetectors are based on the semicon...

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“…For this reason, a thicker active layer is required to increase the quantum efficiency value. However, such a thick active region would limit the bandwidth of the device and therefore decrease the speed operation in the device [ 14 ]. Therefore, a new design is demanded.…”

Section: Introductionmentioning

confidence: 99%

III-Nitrides Resonant Cavity Photodetector Devices

et al. 2020

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III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al0.3Ga0.7N/GaN, an Au-based Schottky contact as top mirror, and an active zone of 40 nm-thick GaN layer. The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky photodetectors were also processed. The results revealed a planar spectral response for the conventional photodetector, unlike the resonant devices that showed two raised peaks at 330 and 358 nm with responsivities of 0.34 and 0.39 mA/W, respectively. Both values were 80 times higher than the planar response of the conventional device. These results demonstrate the strong effect of the optical cavity to achieve the desired wavelength selectivity and to enhance the optical field thanks to the light resonance into the optical cavity. The research of such a combination of nitride-based Bragg mirror and thin active layer is the kernel of the present paper.

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Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes

Cited by 19 publications

References 25 publications

One- and two-photon photocurrents from tunable organic microcavity photodiodes

One- and two-photon photocurrents from tunable organic microcavity photodiodes

Silicon resonant cavity enhanced photodetectors at 1.55 μm

III-Nitrides Resonant Cavity Photodetector Devices

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