Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes

Mahajan, Atul; Skromme, Brian

doi:10.1016/j.sse.2005.03.020

Cited by 53 publications

(34 citation statements)

References 39 publications

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“…The success of many vertical Si and SiC power devices relies on the p-type regions to form junction termination extension (JTE) structures [35] and avoid electric field crowding at the edge of the junction, thus achieving high breakdown voltage [36]. Vertical GaN power devices can benefit from selective p-type doping in implanted guard rings for electric field spreading, merged pn/Schottky (MPS) structures to protect surge currents, and current blocking layers (CBL) for the current aperture vertical electron transistors (CAVET) [37,38].…”

Section: Activation Of Implanted P-type Ganmentioning

confidence: 99%

Materials and processing issues in vertical GaN power electronics

Zhang

Sun

et al. 2018

Materials Science in Semiconductor Processing

130

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Silicon-based power devices are reaching their fundamental performance limit. The use of wide-bandgap semiconductors with superior material properties over silicon offers the potential for power electronic systems with much higher power densities and higher conversion efficiency. GaN, with a high critical electric field and carrier mobility, is considered one of the most promising candidates for future high-power, high frequency and high temperature applications. High voltage transistors and diodes based on both lateral and vertical structures are of great interest for future power electronics. Particularly, vertical GaN power devices have recently attracted increasing attention due to their many unique properties. This paper reviews recent progress and key remaining challenges towards the development of high-performance vertical GaN transistors and diodes with emphasis on the materials and processing issues related to each device architecture.

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Section: Activation Of Implanted P-type Ganmentioning

confidence: 99%

Materials and processing issues in vertical GaN power electronics

Zhang

Sun

et al. 2018

Materials Science in Semiconductor Processing

130

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“…High breakdown voltage and fabrication process complexity of termination structures of high-power SiC devices are very important factors. Among various edge termination structures like guard rings (GR) [5], Manuscript single-and multiple-junction termination extension (JTE) [6], FP termination is a simple technique requiring no implantation, high-temperature anneals or deep trench etching steps and bypassing the problems related to the complex processes [7,8]. The fabrication process of the field plate structure is very simple and it requires only one extended metal plate and can be completed simultaneously with the metallization process [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure

Song

Tang

Yuan

et al. 2015

IEEE Trans. Device Mater. Relib.

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we introduce a field plate termination (FP) structure utilizing semi-insulating polycrystalline silicon (SIPOS) as the dielectrics in 4H-SiC Schottky barriers diodes (SBDs) in order to relieve the electric field enhancement at the junction corners and enhance the breakdown voltage of devices. In SIPOS FP structures, the maximum electric field (EM) within the dielectrics can be significant reduced in reverse blocking states due to the SIPOS with higher dielectric constant (k). Simulation and fabrication of 4H-SiC SBDs with the novel and traditional SiO2 FP were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. Compared to a traditional SiO2 FP structure device, the optimal design of the new type of SIPOS FP structure will lead to an increase of 780V in the breakdown voltage and a 44.8% EM reduction. From the experimental results, it has been proven that the new type of SIPOS FP structure indeed relieves the maximum electric field in the dielectric layer while simultaneously realizes an enhanced device breakdown voltage as high as 1630V, which is about 74.5% of the ideal theoretical breakdown voltage. Index Terms-Field plate, SIPOS dielectrics, 4H-SiC, Breakdown

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“…Its properties of high critical field strength, reasonable carrier mobilities, wide band gap, and high thermal conductivity make it a useful material for high frequency, high temperature, and high power devices [1], [2]. However, due to the high electric fields normally encountered in SiC devices, the reverse leakage current of Schottky diodes can be significantly enhanced prior to junction breakdown due to the tunneling mechanism [3].…”

Section: Introductionmentioning

confidence: 99%

Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration

Latreche¹

2014

International Journal of Physical Research

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The work deals with the dependences of the Schottky barrier height (SBH) on the reverse bias voltage, temperature and on donor concentration of metal/4H-SiC Schottky diodes. Using the tunneling modeling we have shown that the Schottky barrier height on silicon carbide strongly depends on the reverse bias voltage, temperature and doping concentration. At room temperature, the Schottky barrier height increases with increasing the reverse bias voltage at high doping concentration (about 10 16 cm -3 ), while, at low doping concentration (about 10 15 cm -3 ) the Schottky barrier height decreases with increasing the reverse bias voltage. These behaviors are independent of the Schottky barrier lowering effect. That means other effects occur at the barrier and depend on the reverse applied bias. The barrier height increases with increasing temperature and doping concentration under reverse bias conditions. The barrier heights extracted from the Padovani-Stratton formulas are close to the barrier heights extracted from the Tsu-Esaki formula in particular for the thermionic-field emission.

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Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes

Cited by 53 publications

References 39 publications

Materials and processing issues in vertical GaN power electronics

Materials and processing issues in vertical GaN power electronics

Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure

Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration

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