Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure

Abstract

Herein, polarization‐induced self‐isolation free from process damages in AlGaN/GaN high‐electron‐mobility transistor (HEMT) by the incorporation of lateral‐polarity structure (LPS) is demonstrated. The incorporation of LPS into the AlGaN/GaN heterojunction shows that 2D electron gas (2DEG) is formed in the III‐polar heterojunction but depleted in the N‐polar counterpart. A large lateral barrier height of 3.5 eV between the III‐polar and N‐polar domain boundary is revealed and buffer leakage is proved to be responsible for the weakened isolation characteristics. To suppress the buffer leakage, the influence of the AlGaN buffer on the leakage current is comprehensively investigated. Compared to pure GaN film and AlGaN/GaN heterojunction, two‐terminal isolation leakage current in AlGaN/GaN/Al0.2Ga0.8N heterojunction is greatly reduced by about nine orders of magnitude to as low as 10−11 A as experimentally confirmed. The incorporation of LPS into AlGaN/GaN heterojunction provides a novel planar isolation technique with excellent device performance by eliminating the isolation leakage path.

Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

“…The off-state drain current increased with the SiN dielectric layer. Previous research suggests similar results, which considered the damage induced during the SiN deposition by PECVD [10], [31], [32]. Hence, in order to fully leverage the benefits of the SiN dielectric layer, it is essential to carefully balance the trade-off between the improved IDMAX and reliability, and the potential drawbacks such as reduced V th tuning efficiency and some DC characteristics like off-state current, g m , etc.…”