In this work, the insertion of AlScN ferroelectric gate dielectric on the performance of AlGaN/GaN HEMT device is investigated. With negative pre-poling on AlScN, the threshold voltage (Vth) of the device shifts positively with a swing range of 3.26 V. The influence of polarization modulation is also reflected by the suppression of gate leakage and the reduction of subthreshold swing of the device. The AlScN-integrated GaN HEMT exhibits on/off ratio of 106 and a subthreshold swing of 80 mV/dec. The depletion mechanism of 2DEG at the AlGaN/GaN interface was well described by a TCAD model.

Herein, polarization‐induced self‐isolation free from process damages in AlGaN/GaN high‐electron‐mobility transistor (HEMT) by the incorporation of lateral‐polarity structure (LPS) is demonstrated. The incorporation of LPS into the AlGaN/GaN heterojunction shows that 2D electron gas (2DEG) is formed in the III‐polar heterojunction but depleted in the N‐polar counterpart. A large lateral barrier height of 3.5 eV between the III‐polar and N‐polar domain boundary is revealed and buffer leakage is proved to be responsible for the weakened isolation characteristics. To suppress the buffer leakage, the influence of the AlGaN buffer on the leakage current is comprehensively investigated. Compared to pure GaN film and AlGaN/GaN heterojunction, two‐terminal isolation leakage current in AlGaN/GaN/Al0.2Ga0.8N heterojunction is greatly reduced by about nine orders of magnitude to as low as 10−11 A as experimentally confirmed. The incorporation of LPS into AlGaN/GaN heterojunction provides a novel planar isolation technique with excellent device performance by eliminating the isolation leakage path.