Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

Liu, Yuxin; Yang, Shu; Sheng, Kuang

doi:10.1109/jeds.2020.2975220

Cited by 4 publications

(4 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During the simulation, a fixed negative sheet charge of 5 × 10 12 cm −2 was set on the surface of the implanted regions with a thickness of 80 nm, as described in. 26) The equivalent net charge concentration is 6.25 × 10 17 cm −3 . The value of the input negative sheet charge was determined by tuning it to make the simulated breakdown voltage consistent with the measured value.…”

mentioning

confidence: 99%

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Chen

Song

Liu

et al. 2021

Appl. Phys. Express

View full text Add to dashboard Cite

A GaN-on-Si quasi-vertical Schottky barrier diode (SBD) was fabricated with its performance enhanced using fluorine-implanted field rings and sidewall cathodes. F ions induced negative charges and the sidewall electrodes enhanced both the SBD’s breakdown and the on-resistance performance. A low specific on-resistance of 1.23 mΩ·cm2, a turn-on voltage of 0.54 V, a near unity ideality factor of 1.04, a high on/off ratio of >109, and a high breakdown voltage (BV) of 483 V are achieved with a GaN-on-Si quasi-vertical SBD with a 4.5 μm drift layer. The temperature dependency of the I–V characteristics proves the thermal stability of the proposed SBD.

show abstract

mentioning

confidence: 99%

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Chen

Song

Liu

et al. 2021

Appl. Phys. Express

View full text Add to dashboard Cite

show abstract

“…At the same time, fluorine (F) ion also has the capability of modulating the peak electric field due to the negative fixed charges when the device is under a reverse bias. Nevertheless, if the F implanted edge termination is carried out in vertical GaN PINDs, strict design and structural optimization are needed [87].…”

Section: Ion Treatmentmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

View full text Add to dashboard Cite

As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

show abstract

“…However, the on-state resistance and breakdown voltage of the GaN JBS diode is affected by multiple parameters in the P+ region [ 3 ]. The traditional device simulation and experimental test methods have a long cycle and low efficiency, so design requires a lot of human resources.…”

Section: Introductionmentioning

confidence: 99%

GaN JBS Diode Device Performance Prediction Method Based on Neural Network

Duan

Wang

et al. 2023

Micromachines

View full text Add to dashboard Cite

GaN JBS diodes exhibit excellent performance in power electronics. However, device performance is affected by multiple parameters of the P+ region, and the traditional TCAD simulation method is complex and time-consuming. In this study, we used a neural network machine learning method to predict the performance of a GaN JBS diode. First, 3018 groups of sample data composed of device structure and performance parameters were obtained using TCAD tools. The data were then input into the established neural network for training, which could quickly predict the device performance. The final prediction results show that the mean relative errors of the on-state resistance and reverse breakdown voltage are 0.048 and 0.028, respectively. The predicted value has an excellent fitting effect. This method can quickly design GaN JBS diodes with target performance and accelerate research on GaN JBS diode performance prediction.

show abstract

Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

Cited by 4 publications

References 33 publications

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Review of Recent Progress on Vertical GaN-Based PN Diodes

GaN JBS Diode Device Performance Prediction Method Based on Neural Network

Contact Info

Product

Resources

About