Design and Performance Analysis of SiGe Hetero Nanotube Junctionless FET

Thakur, Anchal; Dhiman, Rohit

doi:10.1109/tencon.2019.8929629

Cited by 5 publications

(4 citation statements)

References 16 publications

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“…Thus, it is important to analyze the electric field E i , j ( r , z ) distribution in channel mathematically. The electric field in the channel can be calculated due to both gates by differentiating the electrostatic potential of channel with respect to z‐direction, which is expressed as 25–29 :

{E}_1\left(r,z\right)=-\frac{\partial {\phi}_1\left(r,z\right)}{\partial z}

{E}_2\left(r,z\right)=-\frac{\partial {\phi}_2\left(r,z\right)}{\partial z}

…”

Section: Model Descriptionmentioning

confidence: 99%

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Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL

Thakur,

Dhiman,

Wadhwa

et al. 2024

Int J Numerical Modelling

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In the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dimensional parameters such as the nanotube thickness, core and outer gates thickness and gate electrode work function shows the significant impact on the band to band tunneling in lateral direction (L‐BTBT) which induced GIDL current. It is analyzed that increase in the nanotube thickness and physical oxide thickness increase the GIDL current, while increasing the gate electrode work function, core gate and outer gate thicknesses gives reduced GIDL current. The SiGe S/D NTJLFET produce a remarkable high ION/IOFF ratio ~ 1011. A compact model for GIDL current is also developed which shows the dependency of structure parameters on leakage current. The SiGe has been incorporated as source and drain in NTJLFET which creates the energy band discontinuity. Furthermore, SiGe S/D NTJLFET is fairly compared with the conventional NT JLFET and nanowire (NW) JLFET and shows an improved performance.

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{E}_1\left(r,z\right)=-\frac{\partial {\phi}_1\left(r,z\right)}{\partial z}

{E}_2\left(r,z\right)=-\frac{\partial {\phi}_2\left(r,z\right)}{\partial z}

…”

Section: Model Descriptionmentioning

confidence: 99%

“…Thus, it is important to analyze the electric field E i,j (r, z) distribution in channel mathematically. The electric field in the channel can be calculated due to both gates by differentiating the electrostatic potential of channel with respect to z-direction, which is expressed as [25][26][27][28][29] :…”

Section: Electric Fieldmentioning

confidence: 99%

Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL

Thakur,

Dhiman,

Wadhwa

et al. 2024

Int J Numerical Modelling

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“…In addition, the researchers propose to utilize the valence band discontinuity of heterojunctions to increase the tunneling width of the NT JLFET. The presence of the heterojunction increases the channel-drain barrier height and tunneling width, thus reducing the I OFF [15][16][17]. The lattice mismatch between SiGe and Si produced the biaxial tensile strain in the channel radially and compressive strain along the channel direction which results in electron mobility degradation above germanium content 30% [16].…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Wang,

Xiao,

Wang

et al. 2024

Semicond. Sci. Technol.

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To reduce the static power consumption of the NT JLFET and the effect of SCEs on the NT JLFET, A nanotube junctionless field effect transistor with cyclic low doping concentration regions (C NT JLFET) is proposed. Based on Sentaurus TCAD numerical simulations, the electrical properties of the C NT JLFET and the NT JLFET were comparatively investigated, and the effects of the length (LCD) and radius (RCD) of cyclic low doping concentration regions on the electrical properties of the C NT JLFETs were studied. The C NT JLFET reduces the gate-induced drain leakage (GIDL) due to lateral band-to-band-tunneling (L-BTBT) as compared to the NT JLFET. As the LCD or RCD increases, the off-state current decreases. In addition, the C NT JLFET suffers from fewer short channel effects (SCEs), such as threshold voltage roll-off, drain-induced barrier lowering and subthreshold swing deterioration, compared to the NT JLFET. The inhibition of L-BTBT and attenuation of SCEs by cyclic low doping concentration regions remains when the channel length of the C NT JLFET is shortened to 10 nm. The C NT JLFET are suitable for low power applications as they exhibit reduced L-BTBT and suffer from fewer SCEs.

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“…The other devices like GAA-NWTFET, DGHG-FET, FinFET, Nanotube, TFET etc. [1][2][3][4][5][6][7][8] are recommended to minimize the SCEs and discover different way to examine lower off-current (I OFF ), power and reduced subthreshold-slope (SS) less than 60 mV/decade. From all the previous reported FETs based devices, TFET shows the required low SS and I OFF which is mostly preferred.…”

mentioning

confidence: 99%

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Kumar,

Raj,

Wadhwa

et al. 2024

ECS J. Solid State Sci. Technol.

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This work is based on the analysis and designing of gate all around N+-doped layer nanowire tunnel field-effect transistors (NTFET) without junctions for application in a biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS), and many more with dielectric modulation technique and gate-all-around (GAA) environment. Device sensitivity and tunneling probability is further improved by N+ doped layer (1×1020cm-3). The change in the subthreshold-slope (SS), drain current (ID), transconductance(gm), and ratio of ION/IOFF has been examined to detect the sensitivity of the proposed device by confining various biomolecules in the area of nanocavity. The nanocavity area creates a shield in the source gate of oxide layer and electrodes metal. The junctionless GAA-NTFET (JLGAA-NTFET) shows less leakage current and large control on the channel. The design of JLGAA-NTFET is with high doping concentration and observed higher sensitivity for APTS biomolecule which is suitable for sensor design application.

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Design and Performance Analysis of SiGe Hetero Nanotube Junctionless FET

Cited by 5 publications

References 16 publications

Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL

Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

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